Spin-orbit torque magnetoresistive random access memory and method of operating the same
US-12488820-B2 · Dec 2, 2025 · US
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Wang Kaiyou patents
Wang Kaiyou is listed as an inventor on 17 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Wang Kaiyou |
| Total patents | 17 |
| First publication | Jan 30, 2020 |
| Latest publication | Dec 2, 2025 |
Notable patents
Publications ranked by popularity score, then publication date.
Semiconductor material based on metal nanowires and porous nitride and preparation method thereof
US-12343711-B2 · Jul 1, 2025 · US
Spin-orbit torque magnetoresistive random access memory and method of operating the same
US-2024290367-A1 · Aug 29, 2024 · US
Function switchable magnetic random access memory and method for manufacturing the same
US-11972786-B2 · Apr 30, 2024 · US
Method and system for optimizing problem-solving based on probabilistic bit circuits
US-2023024744-A1 · Jan 26, 2023 · US
Function switchable magnetic random access memory and method for manufacturing the same
US-2023011349-A1 · Jan 12, 2023 · US
Spin valve with built-in electric field and spintronic device comprising the same
US-11307270-B2 · Apr 19, 2022 · US
Semiconductor material based on metal nanowires and porous nitride and preparation method thereof
US-2022088579-A1 · Mar 24, 2022 · US
GaN-based VCSEL chip based on porous DBR and manufacturing method of the same
US-11258231-B2 · Feb 22, 2022 · US
Spin valve and spintronic device comprising the same
US-11249150-B2 · Feb 15, 2022 · US
Recent patents
Latest publications not already listed above.
Spin Valve and Spintronic Device Comprising the Same
US-2021148998-A1 · May 20, 2021 · US
Spin valve with built-in electric field and spintronic device comprising the same
US-2021148999-A1 · May 20, 2021 · US
Voltage control magnetic random storage unit, memory and logic device composed thereby
US-10978121-B2 · Apr 13, 2021 · US
InGaN-based resonant cavity enhanced detector chip based on porous DBR
US-10964829-B2 · Mar 30, 2021 · US
Voltage control magnetic random storage unit, memory and logic device composed thereby
US-2020211609-A1 · Jul 2, 2020 · US
GaN-based VCSEL Chip Based on Porous DBR and Manufacturing Method of the Same
US-2020185882-A1 · Jun 11, 2020 · US
InGaN-based Resonant Cavity Enhanced Detector Chip Based on Porous DBR
US-2020035843-A1 · Jan 30, 2020 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Inst Semiconductors Cas | 17 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| G11C11/1675 | 8 |
| G11C11/161 | 8 |
| H10N50/85 | 8 |
| H10N50/10 | 8 |
| H01L43/10 | 7 |