Spin valve and spintronic device comprising the same

Patent metadata

Field	Value
Publication number	US-11249150-B2
Application number	US-202016783041-A
Country	US
Kind code	B2
Filing date	Feb 5, 2020
Priority date	Nov 14, 2019
Publication date	Feb 15, 2022
Grant date	Feb 15, 2022

Abstract

Exemplary embodiments of the present disclosure provide a spin valve and a spintronic device comprising the same. The spin valves may comprise two or more magnetic layers stacked in sequence, wherein any two adjacent magnetic layers among the two or more magnetic layers have different coercive forces, and at least one of the any two adjacent magnetic layers is a van der Waals magnetic layer, wherein the van der Waals magnetic layer refers to a magnetic layer made of a van der Waals magnetic material.

First claim

We claim:

1. A spin valve comprising two or more magnetic layers stacked in sequence,
wherein any two adjacent magnetic layers among the two or more magnetic layers have different coercive forces, and at least one of the any two adjacent magnetic layers is a van der Waals magnetic layer,
wherein the van der Waals magnetic layer refers to a magnetic layer made of a van der Waals magnetic material,
wherein at least one van der Waals magnetic layer among the two or more magnetic layers has a different van der Waals magnetic material from another van der Waals magnetic layer among the two or more magnetic layers.

2. The spin valve according to claim 1 , wherein each van der Waals magnetic layer is made of the same van der Waals magnetic material.

3. The spin valve according to claim 1 , wherein the van der Waals magnetic layer is made of at least one of: a van der Waals magnetic metal, a van der Waals magnetic semimetal, a van der Waals magnetic semiconductor, a van der Waals magnetic superconductor, a van der Waals magnetic insulator, a van der Waals ferromagnetic material, a van der Waals antiferromagnetic material, a van der Waals in-plane magnetic anisotropic material, a van der Waals out-of-plane magnetic anisotropic material, an organic van der Waals magnetic material, and an inorganic van der Waals magnetic material.

4. The spin valve according to claim 1 , wherein a non-van der Waals magnetic layer among the two or more magnetic layers is made of at least one of: a magnetic metal, a magnetic semimetal, a magnetic semiconductor, a magnetic superconductor, a magnetic insulator, a ferromagnetic material, an antiferromagnetic material, an in-plane magnetic anisotropic material, an out-of-plane magnetic anisotropic material, an organic magnetic material, and an inorganic magnetic material.

5. The spin valve according to claim 1 , wherein at least one of the two or more magnetic layers has a fixed magnetization direction, and other magnetic layer(s) have an unfixed magnetization direction.

6. The spin valve according to claim 1 , further comprising a pinning layer disposed above and/or below the at least one magnetic layer, and configured to fix a magnetization direction of the at least one magnetic layer.

7. A spintronic device comprising the spin valve according to claim 1 .

8. The spintronic device according to claim 7 , wherein the spintronic device is a magnetic memory, a spin transistor, a spin diode, a spin logic device, a spin oscillator, a magnetic sensor, or a temperature sensor.

Assignees

• Inst Semiconductors Cas

Inventors

• Wang Kaiyou
• Hu Ce

Classifications

• H10N50/85

  Materials of the active region · CPC title

• G01R33/093 Primary

  using multilayer structures, e.g. giant magnetoresistance sensors (thin magnetic films H01F10/00) · CPC title

• B82Y25/00

  Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance · CPC title

• H01L43/10

  Electricity · mapped topic

• H10N50/10 Primary

  Magnetoresistive devices · CPC title