Semiconductor material based on metal nanowires and porous nitride and preparation method thereof

Patent metadata

Field	Value
Publication number	US-12343711-B2
Application number	US-201817256762-A
Country	US
Kind code	B2
Filing date	Oct 18, 2018
Priority date	Jul 4, 2018
Publication date	Jul 1, 2025
Grant date	Jul 1, 2025

Abstract

Provided are a semiconductor material based on metal nanowires and a porous nitride, and a preparation method thereof. The semiconductor material includes: a substrate; a buffer layer formed on the substrate; and a composite material layer formed on the buffer layer the composite material layer includes: a transverse porous nitride template layer; and a plurality of metal nanowires filled in pores of the transverse porous nitride template layer.

First claim

What is claimed is:

1. A semiconductor material based on metal nanowires and porous nitride, comprising:
a substrate;
a buffer layer formed on the substrate;
a composite material layer formed on the buffer layer, comprising:
a transverse porous nitride template layer; and
a plurality of metal nanowires filled in pores of the transverse porous nitride template layer,

wherein the transverse porous nitride template layer is n-type doped, and is configured to: provide an electrochemical path for the synthesis of metal nanowires and serve as a working electrode;
wherein a direction in which the nanowires extend is parallel to a surface of the substrate facing the composite material layer;
wherein a preparing material of the transverse porous nitride template layer is GaN, a preparing material of the metal nanowires is Ag, and a transverse porous GaN layer and Ag nanowires are combined to form the composite material layer, wherein diameters of the pores in a transverse porous GaN layer are 40 nm, lengths of the pores are 150 μm, and diameters of Ag nanowires are 40 nm; and
wherein the semiconductor material based on the Ag nanowires and the transverse porous GaN layer has a light absorptivity greater than 50% and less than 70% in a wavelength range from 400 nm to 800 nm.

2. The semiconductor material according to claim 1 , wherein the metal nanowires are a monocrystal.

3. The semiconductor material according to claim 1 , wherein a preparing material of the buffer layer comprises: GaN, AlN, ZnO or grapheme grown at a low temperature.

4. The semiconductor material according to claim 1 , wherein morphologies of the metal nanowires comprise: at least one of cylindrical shape and a triangular prismatic shape.

5. A preparation method for preparing the semiconductor material based on the metal nanowires and the porous nitride according to claim 1 , comprising:
preparing the substrate, and growing and preparing the buffer layer and an n-type nitride epitaxial layer on the substrate;
making the n-type nitride epitaxial layer into the transverse porous nitride template layer;
preparing the metal nanowires in the pores of the transverse porous nitride template layer to obtain the composite material layer, so as to make the semiconductor material based on the metal nanowires and the transverse porous nitride.

6. The preparation method according to claim 5 , wherein the transverse porous nitride template layer is used as a carrier, and the metal nanowires are prepared in the pores of the transverse porous nitride template layer by an electrochemical deposition method.

7. The preparation method according to claim 6 , wherein preparing the metal nanowires in the pores of the transverse porous nitride template layer by the electrochemical deposition method comprises:
preparing an electroplating solution;
immersing the transverse porous nitride template layer in the electroplating solution, and performing an electroplating deposition to obtain the metal nanowires by using the immersed transverse porous nitride template layer as a working electrode, using a Pt sheet as a counter electrode, and using an Ag/AgCl electrode as a reference electrode, so as to make the composite material layer.

8. The preparation method according to claim 5 , wherein preparing the buffer layer and the n-type nitride epitaxial layer on the substrate comprises: using a metal-organic chemical vapor deposition method to sequentially grow a low-temperature buffer layer and the n-type nitride epitaxial layer on the substrate.

9. The preparation method according to claim 5 , wherein making the n-type nitride epitaxial layer into the transverse porous nitride template layer comprises: preparing the transverse porous nitride template layer on the n-type nitride epitaxial layer by an electrochemical corrosion method, and removing a residual electrochemical corrosive electrolyte by ultrasonic cleaning with deionized water.

10. The preparation method according to claim 6 , wherein the electrochemical deposition comprises: a constant voltage method, a constant current method, or a pulse voltage method.

11. The preparation method according to claim 7 , wherein the electroplating solution comprises: AgNO 3 /H 3 BO 3 , HAuCl 4 /Na 2 SO 3 /Na 2 S 2 O 3 or AlCl 3 /NaCl/KCl.

12. The preparation method according to claim 7 , wherein a temperature of the electroplating deposition is 25˜150° C.

13. The preparation method according to claim 7 , wherein in the process of preparing the electroplating solution, the electrolyte is stirred and dissolved for 30˜120 min.

14. The preparation method according to claim 7 , wherein an immersion time of the transverse porous nitride template layer is 30˜120 min.

Assignees

• Inst Semiconductors Cas

Inventors

• Zhao Lixia
• Li Jing
• Yang Chao
• Yu Zhiguo
• Xi Xin
• Wang Kaiyou

Classifications

• B01J35/23

  in a colloidal state · CPC title

• B01J35/45

  Nanoparticles · CPC title

• H10H20/855

  Optical field-shaping means, e.g. lenses · CPC title

• H10H20/825

  containing nitrogen, e.g. GaN · CPC title

• H10H20/0137

  the light-emitting regions comprising nitride materials · CPC title