Forming a metal contact layer on silicon carbide and semiconductor device with metal contact structure
US-10256097-B2 · Apr 9, 2019 · US
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Unegg Gerald patents
Unegg Gerald is listed as an inventor on 12 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Unegg Gerald |
| Total patents | 12 |
| First publication | Apr 13, 2017 |
| Latest publication | Apr 9, 2019 |
Notable patents
Publications ranked by popularity score, then publication date.
Method of manufacturing a silicon carbide semiconductor device by removing amorphized portions
US-10217636-B2 · Feb 26, 2019 · US
Self aligned silicon carbide contact formation using protective layer
US-10049879-B2 · Aug 14, 2018 · US
Method of Manufacturing a Silicon Carbide Semiconductor Device by Removing Amorphized Portions
US-2018204725-A1 · Jul 19, 2018 · US
Forming a Metal Contact Layer on Silicon Carbide and Semiconductor Device with Metal Contact Structure
US-2018174840-A1 · Jun 21, 2018 · US
Method of manufacturing a silicon carbide semiconductor device by removing amorphized portions
US-9934972-B2 · Apr 3, 2018 · US
Self Aligned Silicon Carbide Contact Formation Using Protective Layer
US-2018076036-A1 · Mar 15, 2018 · US
Carbon based contact structure for silicon carbide device technical field
US-9917170-B2 · Mar 13, 2018 · US
Carbon Vacancy Defect Reduction Method for SiC
US-2017309484-A1 · Oct 26, 2017 · US
Carbon Based Contact Structure for Silicon Carbide Device Technical Field
US-2017309720-A1 · Oct 26, 2017 · US
Recent patents
Latest publications not already listed above.
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Infineon Technologies Ag | 12 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D62/8325 | 12 |
| H01L29/1608 | 11 |
| H10D12/031 | 9 |
| H10D64/0115 | 7 |
| H01L21/0485 | 7 |