Carbon based contact structure for silicon carbide device technical field

Patent metadata

Field	Value
Publication number	US-9917170-B2
Application number	US-201615136121-A
Country	US
Kind code	B2
Filing date	Apr 22, 2016
Priority date	Apr 22, 2016
Publication date	Mar 13, 2018
Grant date	Mar 13, 2018

Abstract

A method of forming a contact structure includes providing a silicon-carbide substrate having a highly doped silicon-carbide contact region formed in the substrate and extending to a main surface of the substrate. A carbon-based contact region is formed which is in direct contact with the highly doped silicon-carbide contact region and which extends to the main surface. A conductor is formed on the carbon-based contact region such that the carbon-based contact region is interposed between the conductor and the highly doped silicon-carbide contact region. A thermal budget for forming the carbon-based contact region is maintained below a level that induces metal silicidization of the highly doped silicon-carbide contact region.

First claim

What is claimed is:

1. A method of forming a contact structure for a semiconductor device, comprising:
providing a silicon-carbide substrate having a highly doped silicon-carbide contact region formed in the substrate and extending to a main surface of the substrate;
forming a carbon-based contact region in direct contact with the highly doped silicon-carbide contact region and which extends to the main surface;
forming a conductor on the carbon-based contact region such that the carbon-based contact region is interposed between the conductor and the highly doped silicon-carbide contact region and such that the conductor is in ohmic contact with the carbon-based contact region,
wherein a thermal budget for forming the carbon-based contact region is maintained below a level that induces silicidization of the highly doped silicon-carbide contact region, and
wherein forming the carbon-based contact region comprises depositing a carbon layer directly on the main surface of the substrate, and wherein forming the conductor comprises forming the conductor directly on the carbon layer.

2. The method of claim 1 , wherein forming the carbon contact region comprises depositing carbon on the main surface of the substrate prior to forming the conductor so as to form a first carbon layer that is disposed on the highly doped silicon-carbide contact region above the main surface.

3. The method of claim 2 , wherein forming the carbon contact region comprises depositing an amorphous carbon layer on the first surface and graphitizing the first carbon layer prior to forming the conductor.

4. The method of claim 2 , wherein the main surface extends along a single plane, and wherein the first carbon layer is coplanar with the main surface.

5. The method of claim 2 , wherein forming the carbon contact region further comprises forming a second carbon-rich layer in the substrate that is disposed within the highly doped silicon-carbide contact region below the main surface and adjoins the first carbon layer at the main surface.

6. The method of claim 5 , wherein forming the second carbon-rich layer comprises at least one of:
implanting carbon ions into the main surface of the substrate; and
treating the main surface of the substrate so as to remove silicon atoms from the highly doped silicon-carbide contact region.

7. The method of claim 1 , wherein forming the carbon contact region comprises, prior to forming the conductor, forming a carbon-rich layer that is disposed within the highly doped silicon-carbide contact region below the main surface.

8. The method of claim 7 , wherein forming the carbon-rich layer comprises implanting carbon ions into the main surface of the substrate.

9. The method of claim 7 , wherein forming the carbon-rich layer comprises treating the main surface of the substrate so as to remove silicon atoms from the doped silicon-carbide contact region.

10. The method of claim 9 , wherein treating the main surface of the substrate comprises applying a fluorine treatment to the main surface using a remote plasma source.

11. The method of claim 1 , wherein the conductor comprises a metal or metal alloy including at least one of: Aluminum (Al), Copper (Cu) and Titanium (Ti).

12. A method of forming a contact structure for a semiconductor device, comprising:
providing a silicon-carbide substrate having a highly doped silicon-carbide contact region formed in the substrate and extending to a main surface of the substrate;
forming a carbon-based contact region in direct contact with the highly doped silicon-carbide contact region and which extends to the main surface;
forming a conductor on the carbon-based contact region such that the carbon-based contact region is interposed between the conductor and the highly doped silicon-carbide contact region, and such that the conductor is in ohmic contact with the carbon-based contact region,
wherein the carbon-based contact region is formed before the conductor, and
wherein the main surface extends along a single plane, and
wherein forming the carbon-based contact region comprises depositing a carbon layer directly on the main surface of the substrate and forming the conductor comprises forming the conductor directly on the carbon layer, or
wherein forming the carbon-based contact region comprises implanting carbon ions directly into the main surface or selectively removing silicon atoms from the silicon-carbide substrate and forming the conductor comprises forming the conductor directly on the main surface.

13. The method of claim 12 , wherein forming the carbon-based contact region comprises depositing carbon on the main surface of the substrate prior to forming the conductor so as to form a first carbon layer that is disposed on the highly doped silicon-carbide contact region above the main surface.

14. The method of claim 12 , wherein forming the carbon-based contact region comprises implanting carbon ions into the main surface of the substrate so as to form a carbon rich layer that is disposed within the highly doped silicon-carbide contact region below the main surface.

15. The method of claim 12 , wherein forming the carbon contact region comprises treating the main surface of the substrate so as to remove silicon atoms from the doped silicon-carbide contact region thereby forming a carbon rich layer that is disposed within the highly doped silicon-carbide contact region below the main surface.

16. The method of claim 12 , wherein the conductor comprises a metal or metal alloy including at least one of: Aluminum (Al), Copper (Cu) and Titanium (Ti).

17. The method of claim 12 , wherein the conductor comprises nickel and wherein a thermal budget for forming the carbon-based contact region and for forming the conductor is maintained below a level that induces silicidization of the highly doped silicon-carbide contact region.

18. A method of forming a contact structure for a semiconductor device, comprising:
providing a silicon-carbide substrate having a highly doped silicon-carbide contact region formed in the substrate and extending to a main surface of the substrate;
forming a carbon-based contact region in direct contact with the highly doped silicon-carbide contact region and which extends to the main surface;
forming a conductor on the carbon-based contact region such that the carbon-based contact region is interposed between the conductor and the highly doped silicon-carbide contact region and such that the conductor is in ohmic contact with the carbon-based contact region,
wherein a thermal budget for forming the carbon-based contact region is maintained below a level that induces silicidization of the highly doped silicon-carbide contact region,
wherein forming the carbon contact region comprises implanting carbon ions directly into the main surface or selectively removing silicon atoms from the silicon-carbide substrate, and wherein forming the conductor comprises forming the conductor directly on the main surface.

Assignees

• Infineon Technologies Ag

Inventors

• Joshi Ravi
• Esteve Romain
• Kahn Markus
• Unegg Gerald

Classifications

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P30/2042

  into crystalline silicon carbide · CPC title

• H10P30/208

  of electrically inactive species · CPC title

• H10P30/204

  into Group IV semiconductors · CPC title

• H10P30/21

  of electrically active species · CPC title