Semiconductor device and method for producing semiconductor device
US-12439735-B2 · Oct 7, 2025 · US
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Takeuchi Tetsuya patents
Takeuchi Tetsuya is listed as an inventor on 43 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Takeuchi Tetsuya |
| Total patents | 43 |
| First publication | Jun 11, 2015 |
| Latest publication | Oct 7, 2025 |
Notable patents
Publications ranked by popularity score, then publication date.
Nitride semiconductor light emitting element and method for producing nitride semiconductor light emitting element
US-2025253622-A1 · Aug 7, 2025 · US
Group iii nitride semiconductor and production method therefor
US-2025248172-A1 · Jul 31, 2025 · US
Method for manufacturing nitride semiconductor light-emitting element, and nitride semiconductor light-emitting element
US-2025183623-A1 · Jun 5, 2025 · US
Semiconductor light-emitting device including a plurality of columnar semiconductors
US-2025151463-A1 · May 8, 2025 · US
Method for producing group iii nitride semiconductor
US-2025122643-A1 · Apr 17, 2025 · US
Light emitting device
US-2024421259-A1 · Dec 19, 2024 · US
Vertical cavity light-emitting element
US-2024380173-A1 · Nov 14, 2024 · US
Laminate and method of manufacturing laminate
US-2024113174-A1 · Apr 4, 2024 · US
Chip on submount
US-2024106189-A1 · Mar 28, 2024 · US
Recent patents
Latest publications not already listed above.
Method for manufacturing light-emitting element and method for removing hydrogen from light-emitting element
US-11916164-B2 · Feb 27, 2024 · US
Semiconductor light emitting element and method for manufacturing semiconductor light emitting element
US-2023369534-A1 · Nov 16, 2023 · US
Semiconductor light emitting device and manufacturing method of semiconductor light emitting device
US-11462659-B2 · Oct 4, 2022 · US
Semiconductor device and method for producing semiconductor device
US-2022246789-A1 · Aug 4, 2022 · US
Semiconductor device and method for producing semiconductor device
US-2022246793-A1 · Aug 4, 2022 · US
Method for manufacturing light-emitting element and method for removing hydrogen from light-emitting element
US-2022231189-A1 · Jul 21, 2022 · US
Semiconductor multilayer film reflecting mirror and vertical cavity light-emitting element
US-11146040-B2 · Oct 12, 2021 · US
Semiconductor multilayer film reflecting mirror and vertical cavity light-emitting element
US-2021111538-A1 · Apr 15, 2021 · US
Semiconductor light emitting device and manufacturing method of semiconductor light emitting device
US-2021074877-A1 · Mar 11, 2021 · US
Vertical cavity light-emitting element
US-10892601-B2 · Jan 12, 2021 · US
Group III nitride semiconductor light-emitting device and production method therefor
US-10833223-B2 · Nov 10, 2020 · US
Nitride semiconductor crystal and method of fabricating the same
US-2020144451-A1 · May 7, 2020 · US
Nitride semiconductor multilayer film reflector and light-emitting device using the same
US-10593831-B2 · Mar 17, 2020 · US
Vertical cavity light-emitting element
US-2019363515-A1 · Nov 28, 2019 · US
Semiconductor multilayer film reflecting mirror, vertical cavity light-emitting element using the reflecting mirror, and methods for manufacturing the reflecting mirror and the element
US-10411438-B2 · Sep 10, 2019 · US
Group iii nitride semiconductor light-emitting device and production method therefor
US-2019148592-A1 · May 16, 2019 · US
Semiconductor multilayer film mirror, vertical cavity type light-emitting element using the mirror, and methods for manufacturing the mirror and the element
US-10116120-B2 · Oct 30, 2018 · US
Semiconductor multilayer film reflecting mirror, vertical cavity light-emitting element using the reflecting mirror, and methods for manufacturing the reflecting mirror and the element
US-2018166855-A1 · Jun 14, 2018 · US
Semiconductor multilayer film mirror, vertical cavity type light-emitting element using the mirror, and methods for manufacturing the mirror and the element
US-2018166856-A1 · Jun 14, 2018 · US
Nitride semiconductor light-emitting device with periodic gain active layers
US-9847449-B2 · Dec 19, 2017 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Univ Meijo | 38 |
| Toyoda Gosei Kk | 13 |
| Stanley Electric Co Ltd | 13 |
| Koito Mfg Co Ltd | 4 |
| Fujitsu Semiconductor Ltd | 2 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10H20/825 | 21 |
| H10H20/01335 | 15 |
| H01L33/32 | 15 |
| H01S5/34333 | 14 |
| H10H20/812 | 14 |