Semiconductor device and method for producing semiconductor device

Patent metadata

Field	Value
Publication number	US-12439735-B2
Application number	US-202217581256-A
Country	US
Kind code	B2
Filing date	Jan 21, 2022
Priority date	Feb 1, 2021
Publication date	Oct 7, 2025
Grant date	Oct 7, 2025

Abstract

To suppress current leakage between the semiconductor layer below the mask and the buried layer above the mask. To reduce the drive voltage and improve the emission efficiency by improving the efficiency of carrier injection into the active layer. The semiconductor light-emitting device includes a substrate, a mask, a columnar semiconductor, a buried layer, a cathode electrode, and an anode electrode. The substrate has a conductive substrate, an n-type semiconductor layer disposed on the conductive substrate, and a p-type semiconductor layer disposed on the n-type semiconductor layer. The p-type semiconductor layer has a high resistance, thereby enhancing insulation between the n-type semiconductor layer and the buried layer.

First claim

What is claimed is:

1. A semiconductor device comprising:
a first n-type semiconductor layer;
a tunnel junction layer formed on the first n-type semiconductor layer;
a second p-type semiconductor layer formed on the tunnel junction layer;
a dielectric mask formed on the second p-type semiconductor layer;
a plurality of openings formed on the dielectric mask as holes having a depth reaching the second p-type semiconductor layer; and
a plurality of p-type columnar semiconductor formed on the second p-type semiconductor layer of the openings,
wherein a mesa is further formed, and the tunnel junction layer and the second p-type semiconductor layer are exposed on a side surface of the mesa, further comprising:
a buried layer comprising an n-type semiconductor for filling in a space between the plurality of p-type columnar semiconductors, and
wherein the mesa is a trench for separating elements.

2. The semiconductor device according to claim 1 , wherein the columnar semiconductor is exposed on a side surface of the mesa.

3. A semiconductor device comprising:
a semiconductor layer of a first type;
a tunnel junction layer formed on the semiconductor layer of a first type;
a semiconductor layer of a second type formed on the tunnel junction layer;
a dielectric mask formed on the semiconductor layer of the second type;
a plurality of openings formed on the dielectric mask as holes having a depth reaching the semiconductor layer of the second type; and
a plurality of columnar semiconductor of a second type of semiconductor formed on the semiconductor layer of the second type of the openings,
wherein a mesa is further formed, and the tunnel junction layer and the semiconductor layer of the second type are exposed on a side surface of the mesa, further comprising:
a buried layer comprising a semiconductor of a first type for filling in a space between the plurality of columnar semiconductors of the second type semiconductor, and
wherein the mesa is a trench for separating elements.

4. The semiconductor device according to claim 3 , wherein the columnar semiconductor is exposed on a side surface of the mesa.

5. The semiconductor device according to claim 3 , wherein the semiconductor layer of the second type is semiconductor having a conduction type different from a conduction type of the semiconductor layer of the first type.

6. The semiconductor device according to claim 3 , wherein a thickness of the dielectric mask is 2 nm to 50 nm.

7. The semiconductor device according to claim 3 , wherein the semiconductor layer of the second type is undoped semiconductor.

8. The semiconductor device according to claim 3 , wherein the buried layer is semiconductor having a same conduction type as that of the semiconductor layer of the first type.

Assignees

• Toyoda Gosei Kk
• Univ Meijo

Inventors

• Okuno Koji
• Mizutani Koichi
• Oya Masaki
• Iida Kazuyoshi
• Kamiyama Satoshi
• Takeuchi Tetsuya
• Iwaya Motoaki
• Akasaki Isamu

Classifications

• H10H20/821

  of the light-emitting regions, e.g. non-planar junctions · CPC title

• H10H20/812

  within the light-emitting regions, e.g. having quantum confinement structures · CPC title

• H10H20/0137

  the light-emitting regions comprising nitride materials · CPC title

• H10H20/01

  Manufacture or treatment · CPC title

• H10H20/01335

  the light-emitting regions comprising nitride materials · CPC title