Semiconductor multilayer film reflecting mirror and vertical cavity light-emitting element

Patent metadata

Field	Value
Publication number	US-11146040-B2
Application number	US-201816498385-A
Country	US
Kind code	B2
Filing date	Mar 13, 2018
Priority date	Mar 27, 2017
Publication date	Oct 12, 2021
Grant date	Oct 12, 2021

Abstract

Included is a semiconductor multilayer film in which a non-doped InAlN layer and a GaN layer formed on said InAlN layer and containing a dopant are stacked a plurality of times.

First claim

The invention claimed is:

1. A semiconductor multilayer film reflecting mirror comprising:
a substrate; and
a semiconductor multilayer film which is formed on said substrate and which includes a plurality of first layers and a plurality of second layers which are stacked on each other in an alternating manner,
wherein each of said first layers comprises a non-doped InAlN layer, and
wherein each of said second layers comprises a GaN layer containing a dopant.

2. The semiconductor multilayer film reflecting mirror according to claim 1 , wherein said dopant is Si.

3. The semiconductor multilayer film reflecting mirror according to claim 2 , wherein an Si concentration is at least 3×10 18 atoms/cm 3 in said GaN layer containing said dopant in each of said second layers.

4. The semiconductor multilayer film reflecting mirror according to claim 1 , wherein said dopant is Mg.

5. The semiconductor multilayer film reflecting mirror according to claim 1 , wherein each of said second layers consists of a first GaN layer and a second GaN layer, and only one of said first GaN layer or said second GaN layer contains said dopant.

6. The semiconductor multilayer film reflecting mirror according to claim 5 , wherein each of said first layers consist of a single non-doped InAlN layer.

7. The semiconductor multilayer film reflecting mirror according to claim 6 , wherein, in each of said second layers, said first GaN layer contains said dopant and said second GaN layer does not contain said dopant, and
wherein said plurality of first layers and said plurality of second layers are stacked on each other in said semiconductor multilayer film such that said first GaN layer of said second layers is stacked on a surface of said InAlN layer of said first layers.

8. The semiconductor multilayer film reflecting mirror according to claim 7 , wherein, in each of said second layers, said first GaN layer is thinner than said second GaN layer.

9. A vertical cavity light-emitting element comprising:
a semiconductor structure layer including a first semiconductor layer having a first conductivity type, an active layer, and a second semiconductor layer having a second conductivity type opposite to said first conductivity type; and
first and second reflecting mirrors opposite to each other with said semiconductor structure layer interposed therebetween,
wherein:
said first reflecting mirror comprises a semiconductor multilayer film which includes a plurality of first layers and a plurality of second layers which are stacked on each other in an alternating manner,
wherein each of said first layers comprises a non-doped InAlN layer; and
wherein each of said second layers comprises a GaN layer containing a dopant.

Assignees

• Univ Meijo
• Stanley Electric Co Ltd

Inventors

• Takeuchi Tetsuya
• Akasaki Isamu
• Kiyohara Kazuki
• Takizawa Masaru
• Liang Ji-Hao

Classifications

• H01S5/2009

  by using electron barrier layers · CPC title

• H01S5/18308

  having a special structure for lateral current or light confinement · CPC title

• G02B5/26

  Reflecting filters (G02B5/28 takes precedence) · CPC title

• H01S2301/173

  The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction · CPC title

• H01S2304/04

  MOCVD or MOVPE · CPC title