Nitride semiconductor light-emitting device with periodic gain active layers

Patent metadata

Field	Value
Publication number	US-9847449-B2
Application number	US-201514955409-A
Country	US
Kind code	B2
Filing date	Dec 1, 2015
Priority date	Dec 4, 2014
Publication date	Dec 19, 2017
Grant date	Dec 19, 2017

Abstract

A nitride semiconductor light-emitting device with periodic gain active layers includes an n-type semiconductor layer, a p-type semiconductor layer and a resonator. The device further includes a plurality of active layers disposed between the n-type and p-type semiconductor layers so as to correspond to a peak intensity position of light existing in the resonator and at least one interlayer disposed between the active layers. The active layer disposed at the p-type semiconductor layer side has a larger light emission intensity than the active layer disposed at the n-type semiconductor layer side.

First claim

We claim:

1. A nitride semiconductor light-emitting device with periodic gain active layers, which includes an n-type semiconductor layer, a p-type semiconductor layer and a resonator, the device comprising:
two active layers disposed between the n-type and p-type semiconductor layers so as to correspond to a peak intensity position of light existing in the resonator, each active layer being formed by alternately stacking a plurality of quantum well layers each formed of GaInN and a plurality of barrier layers each formed of GaN one upon another, the active layers having respective light emission wavelengths equal to each other; and
at least one interlayer disposed between the active layers so as to be adjacent to the active layers, the interlayer having a larger thickness than the barrier layers and being formed of GaN, wherein Mg as a p-type impurity doped into the interlayer has a concentration of not more than 5×10 18 cm −3 ,
wherein the active layer disposed at the p-type semiconductor layer side has a larger light emission intensity than the active layer disposed at the n-type semiconductor layer side; and
wherein Mg as a p-type impurity doped into the active layer disposed at the p-type semiconductor layer side has a concentration ranging from 0.2 times to twice as high as a concentration of the Mg doped into the interlayer.

2. The device according to claim 1 , wherein the interlayer is thicker than the active layers.

3. The device according to claim 1 , wherein the interlayer includes a thicknesswise central part having a section into which Mg as a p-type impurity is doped.

4. A nitride semiconductor light-emitting device with periodic gain active layers, which includes an n-type semiconductor layer, a p-type semiconductor layer and a resonator, the device comprising:
two active layers disposed between the n-type and p-type semiconductor layers so as to correspond to a peak intensity position of light existing in the resonator, each active layer being formed by alternately stacking a plurality of quantum well layers each formed of GaInN and a plurality of barrier layers each formed of GaN one upon another, the active layers having respective light emission wavelengths equal to each other; and
at least one interlayer disposed between the active layers so as to be adjacent to the active layers, the interlayer having a larger thickness than the barrier layers and being formed of GaN, wherein Mg as a p-type impurity doped into the interlayer has a concentration of not more than 5×10 18 cm −3,
wherein an amount of positive holes and electrons injected into the active layer disposed at the p-type semiconductor layer side is larger than an amount of positive holes and electrons injected into the active layer disposed at the n-type semiconductor layer side; and
wherein Mg as a p-type impurity doped into the active layer disposed at the p-type semiconductor layer side has a concentration ranging from 0.2 times to twice as high as a concentration of the Mg doped into the interlayer.

5. The device according to claim 4 , wherein the interlayer is thicker than the active layers.

6. The device according to claim 4 , wherein the interlayer includes a thicknesswise central part having a section into which Mg as a p-type impurity is doped.

Assignees

• Univ Meijo
• Stanley Electric Co Ltd

Inventors

• Matsui Kenjo
• Takeuchi Tetsuya
• Iwaya Motoaki
• Akasaki Isamu
• Akagi Takanobu
• Iwayama Sho

Classifications

• H01S5/1096

  in a single cavity · CPC title

• H01S5/18383

  with periodic active regions at nodes or maxima of light intensity · CPC title

• H01S5/18369

  based on dielectric materials · CPC title

• H01S5/3063

  using Mg · CPC title

• H01S5/04254

  characterised by the shape · CPC title