Semiconductor device including a field stop region with hydrogen related donors in first and second sub-regions
US-2026018416-A1 · Jan 15, 2026 · US
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Schloegl Daniel patents
Schloegl Daniel is listed as an inventor on 39 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Schloegl Daniel |
| Total patents | 39 |
| First publication | Jan 15, 2015 |
| Latest publication | Jan 15, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Semiconductor device including a field stop region
US-12513921-B2 · Dec 30, 2025 · US
Semiconductor device including a field stop region
US-12438002-B2 · Oct 7, 2025 · US
Vertical power semiconductor device and manufacturing method
US-12224317-B2 · Feb 11, 2025 · US
Vertical Power Semiconductor Device and Manufacturing Method
US-2023352531-A1 · Nov 2, 2023 · US
Vertical power semiconductor device including a field stop region having a plurality of impurity peaks
US-11742384-B2 · Aug 29, 2023 · US
Power semiconductor diode including field stop region
US-11569392-B2 · Jan 31, 2023 · US
Semiconductor device including a field stop region
US-2022406947-A1 · Dec 22, 2022 · US
Semiconductor device including a field stop region
US-2022406600-A1 · Dec 22, 2022 · US
Power Semiconductor Diode Including Field Stop Region
US-2022085215-A1 · Mar 17, 2022 · US
Recent patents
Latest publications not already listed above.
Vertical power semiconductor device and manufacturing method
US-2021320174-A1 · Oct 14, 2021 · US
Method for manufacturing a power semiconductor device having a reduced oxygen concentration
US-10727311-B2 · Jul 28, 2020 · US
Method for processing a semiconductor device and semiconductor device
US-10665687-B2 · May 26, 2020 · US
Method of manufacturing a power semiconductor device
US-10529809-B2 · Jan 7, 2020 · US
Method of manufacturing a semiconductor device having an undulated profile of net doping in a drift zone
US-10497801-B2 · Dec 3, 2019 · US
Method of Manufacturing a Power Semiconductor Device
US-2019157401-A1 · May 23, 2019 · US
Method of Manufacturing a Semiconductor Device Having an Undulated Profile of Net Doping in a Drift Zone
US-2019157435-A1 · May 23, 2019 · US
Method of manufacturing semiconductor devices by using epitaxy and semiconductor devices with a lateral structure
US-10276656-B2 · Apr 30, 2019 · US
Producing a semiconductor device by epitaxial growth
US-10243066-B2 · Mar 26, 2019 · US
Semiconductor device including undulated profile of net doping in a drift zone
US-10211325-B2 · Feb 19, 2019 · US
Method for Manufacturing a Power Semiconductor Device Having a Reduced Oxygen Concentration
US-2019035909-A1 · Jan 31, 2019 · US
Power semiconductor device
US-10186587-B2 · Jan 22, 2019 · US
Method of Manufacturing Semiconductor Devices by Using Epitaxy and Semiconductor Devices with a Lateral Structure
US-2018226471-A1 · Aug 9, 2018 · US
Power Semiconductor Device
US-2017373157-A1 · Dec 28, 2017 · US
Producing a Semiconductor Device by Epitaxial Growth
US-2017243963-A1 · Aug 24, 2017 · US
Method for processing a semiconductor device and semiconductor device
US-2017194450-A1 · Jul 6, 2017 · US
Semiconductor to metal transition for semiconductor devices
US-9685504-B2 · Jun 20, 2017 · US
Method for processing a semiconductor device and semiconductor device
US-9653296-B2 · May 16, 2017 · US
Producing a semiconductor device by epitaxial growth
US-9647083-B2 · May 9, 2017 · US
Semiconductor to Metal Transition for Semiconductor Devices
US-2016372539-A1 · Dec 22, 2016 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Infineon Technologies Ag | 38 |
| Infineon Technologies Austria Ag | 2 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D62/60 | 30 |
| H10D8/00 | 26 |
| H10D62/393 | 25 |
| H10D62/129 | 24 |
| H10D12/032 | 24 |