Power semiconductor diode including field stop region

Patent metadata

Field	Value
Publication number	US-11569392-B2
Application number	US-202117466342-A
Country	US
Kind code	B2
Filing date	Sep 3, 2021
Priority date	Sep 14, 2020
Publication date	Jan 31, 2023
Grant date	Jan 31, 2023

Abstract

A power semiconductor diode includes a semiconductor body having first and second main surfaces opposite to each other along a vertical direction. A drift region of a second conductivity type is arranged between an anode region of a first conductivity type and the second main surface. A field stop region of the second conductivity type is arranged between the drift region and the second main surface. A dopant concentration profile of the field stop region along the vertical direction includes a maximum peak. An injection region of the first conductivity type is arranged between the field stop region and the second main surface, with a pn-junction between the injection and field stop regions. A cathode contact region of the second conductivity type is arranged between the field stop region and the second main surface. A first vertical distance between the pn-junction and the maximum peak ranges from 200 nm to 1500 nm.

First claim

What is claimed is:

1. A power semiconductor diode, comprising:
a semiconductor body having a first main surface and a second main surface opposite to each other along a vertical direction;
an anode region of a first conductivity type;
a drift region of a second conductivity type, wherein the drift region is arranged between the anode region and the second main surface;
a field stop region of the second conductivity type, wherein the field stop region is arranged between the drift region and the second main surface, and a dopant concentration profile of the field stop region along the vertical direction includes a maximum peak;
an injection region of the first conductivity type, wherein the injection region is arranged between the field stop region and the second main surface, and a pn-junction is formed between the injection region and the field stop region; and
a cathode contact region of the second conductivity type, wherein the cathode contact region is arranged between the field stop region and the second main surface,
wherein a first vertical distance between the pn-junction and the maximum peak ranges from 200 nm to 1500 nm.

2. The power semiconductor diode of claim 1 , wherein the dopant concentration profile of the field stop region decreases, along the vertical direction toward the first main surface, from the maximum peak to half of the maximum peak at a second vertical distance to the pn-junction, and wherein a ratio between the second vertical distance and the first vertical distance ranges from 1.42 and 2.2.

3. The power semiconductor diode of claim 1 , wherein a dose of dopants of the field stop region is smaller than 1×10 13 cm −2 .

4. The power semiconductor diode of claim 1 , wherein the dopant concentration profile of the field stop region along the vertical direction includes a single peak.

5. The power semiconductor diode of claim 1 , wherein the dopant concentration profile of the field stop region along the vertical direction includes a second peak, and the maximum peak is located between the second peak and the second main surface.

6. The power semiconductor diode of claim 5 , wherein the dopant concentration profile of the field stop region along the vertical direction includes a minimum between the maximum peak and the second peak, and wherein a dopant concentration ratio between the minimum and the second peak ranges from 0.7 to 0.95.

7. The power semiconductor diode of claim 5 , further comprising a third vertical distance between the maximum peak and the second main surface, and a fourth vertical distance between the maximum peak and the second peak, and wherein a ratio between the fourth vertical distance and the third vertical distance ranges from 0.5 to 2.0.

8. The power semiconductor diode of claim 7 , wherein the third vertical distance is smaller than 2.5 μm.

9. The power semiconductor diode of claim 1 , wherein the dopant concentration profile of the field stop region along the vertical direction includes at least one minimum, and wherein a dopant concentration of the at least one minimum is at least a factor ten greater than a mean dopant concentration of the drift region.

10. The power semiconductor diode of claim 1 , wherein a dopant concentration ratio between a maximum dopant concentration of the injection region and the maximum peak is greater than 10.

11. The power semiconductor diode of claim 1 , wherein a dopant concentration ratio between a maximum dopant concentration of the injection region and the maximum peak is smaller than 50000.

12. The power semiconductor diode of claim 1 , wherein a maximum dopant concentration of the cathode contact region is at least a factor 5 greater than a maximum dopant concentration of the injection region.

13. The power semiconductor diode of claim 1 , further comprising a fifth vertical distance between the second main surface and the pn-junction, and wherein the fifth vertical distance ranges from 200 nm to 500 nm.

14. The power semiconductor diode of claim 1 , wherein the field stop region includes hydrogen-related donors.

15. The power semiconductor diode of claim 1 , wherein a maximum lateral extension of the injection region ranges from 10 −17 cm 4 ×dopant concentration of the maximum peak to 10 −14 cm 4 ×dopant concentration of the maximum peak.

16. The power semiconductor diode of claim 1 , further comprising a sixth vertical distance between the maximum peak and an interface between the field stop region and the cathode contact region, and wherein the first vertical distance is smaller than the sixth vertical distance.

17. The power semiconductor diode of claim 1 , wherein a dose of dopants of the cathode contact region is smaller than 1×10 15 cm −2 .

18. A method of manufacturing a power semiconductor diode, the method comprising:
providing a semiconductor body having a first main surface and a second main surface opposite to each other along a vertical direction;
forming an anode region of a first conductivity type in the semiconductor body;
forming a drift region of a second conductivity type, wherein the drift region is arranged between the anode region and the second main surface;
forming a field stop region of the second conductivity type, wherein the field stop region is arranged between the drift region and the second main surface, and a dopant concentration profile of the field stop region along the vertical direction includes a maximum peak;
forming an injection region of the first conductivity type, wherein the injection region is arranged between the field stop region and the second main surface, and a pn-junction is formed between the injection region and the field stop region; and
forming a cathode contact region of the second conductivity type, wherein the cathode contact region is arranged between the field stop region and the second main surface,
wherein a first vertical distance between the pn-junction and the maximum peak ranges from 200 nm to 1500 nm.

19. The method of claim 18 , wherein forming the field stop region comprises at least one proton implantation process, and wherein a minimum proton implantation energy of the at least one proton implantation process is 150 keV.

20. The method of claim 18 , wherein forming the field stop region comprises at least one proton implantation process, and wherein a tilt angle of the at least one proton implantation process ranges from 30° to 80°.

Assignees

• Infineon Technologies Ag

Inventors

• Schulze Hans-Joachim
• Jaeger Christian
• Jelinek Moriz
• Schloegl Daniel
• Stoib Benedikt

Classifications

• H10P30/20

  into semiconductor materials, e.g. for doping · CPC title

• H01L29/0603

  Electricity · mapped topic

• H01L21/265

  Electricity · mapped topic

• H01L29/861 Primary

  Electricity · mapped topic

• H01L29/66136

  Electricity · mapped topic