Semiconductor to metal transition for semiconductor devices

Patent metadata

Field	Value
Publication number	US-9685504-B2
Application number	US-201615253070-A
Country	US
Kind code	B2
Filing date	Aug 31, 2016
Priority date	Nov 14, 2014
Publication date	Jun 20, 2017
Grant date	Jun 20, 2017

Abstract

A semiconductor device includes a first semiconductor region having first charge carriers of a first conductivity type and a second semiconductor region having second charge carriers. The first semiconductor region includes a transition region in contact with the second semiconductor region, the transition region having a first concentration of the first charge carriers, a contact region having a second concentration of the first charge carriers, wherein the second concentration is higher than the first concentration, and a damage region between the contact region and the transition region. The damage region is configured for reducing lifetime and/or mobility of the first charge carriers of the damage region as compared to the lifetime and/or the mobility of the first charge carriers of the contact region and the transition region.

First claim

What is claimed is:

1. A semiconductor device comprising a first semiconductor region having first charge carriers of a first conductivity type and a second semiconductor region having second charge carriers, wherein the first semiconductor region comprises:
a transition region in contact with the second semiconductor region, the transition region having a first concentration of the first charge carriers;
a contact region having a second concentration of the first charge carriers, wherein the second concentration is higher than the first concentration; and
a damage region between the contact region and the transition region, the damage region being configured to reduce lifetime and/or mobility of the first charge carriers of the damage region as compared to the lifetime and/or the mobility of the first charge carriers of the contact region and the transition region.

2. The semiconductor device of claim 1 , wherein the contact region is doped with a contact region doping material, the contact region doping material comprising at least one of boron and phosphorus, and wherein the contact region doping material establishes a presence of the first charge carriers in the contact region.

3. The semiconductor device of claim 1 , wherein the damage region is doped with a damage region doping material, the damage region doping material comprising at least one of germanium, silicon, carbon, helium, neon, argon, xenon, and krypton.

4. The semiconductor device of claim 3 , wherein the damage region doping material is not activated.

5. The semiconductor device of claim 1 , wherein the transition region and the contact region are doped with a same contact region doping material, and wherein the contact region doping material included in the transition region establishes a presence of the first charge carriers in the transition region.

6. The semiconductor device of claim 1 , wherein the second semiconductor region is doped with a second semiconductor region doping material, the second semiconductor region doping material establishing a presence of the second charge carriers.

7. The semiconductor device of claim 6 , wherein the second semiconductor region doping material comprises at least one of phosphorus, arsenic and antimony.

8. The semiconductor device of claim 1 , wherein the damage region has, in a direction of a flow of a load current conducted by the semiconductor device, a thickness in a range of 50 nm to 1000 nm.

9. The semiconductor device of claim 1 , wherein the contact region has, in a direction of a flow of a load current conducted by the semiconductor device, a thickness in the range of 50 nm to 1000 nm.

10. The semiconductor device of claim 1 , wherein the transition region has, in a direction of a flow of a load current conducted by the semiconductor device, a thickness in the range of 200 nm to 10000 nm.

11. The semiconductor device of claim 1 , wherein the second concentration of the first charge carriers in the contact region is at least 50 times as high as the first concentration of the first charge carriers in the transition region.

12. The semiconductor device of claim 1 , wherein the damage region extends, in a direction of a flow of a load current conducted by the semiconductor device, deeper into the first semiconductor region than the contact region, and wherein the transition region extends deeper into the first semiconductor region than the damage region.

13. A semiconductor component to metal contact transition, the metal contact comprising:
a metallization layer configured for being contacted by an external contactor and for receiving a load current via the external contactor,

wherein the semiconductor component comprises:
a first semiconductor region having first charge carriers of a first conductivity type; and
a second semiconductor region having second charge carriers;

wherein the first semiconductor region comprises:
a transition region in contact with the second semiconductor region, the transition region having a first concentration of the first charge carriers;
a contact region having a second concentration of the first charge carriers, the second concentration being higher than the first concentration;
a damage region between the contact region and the transition region, the damage region being configured for reducing lifetime and/or mobility of the first charge carriers of the damage region as compared to the lifetime and/or the mobility of the first charge carriers of the contact region and the transition region.

14. A method of manufacturing a semiconductor device, the method comprising:
providing a first semiconductor region having first charge carriers of a first conductivity type and a second semiconductor region having second charge carriers, wherein the first semiconductor region comprises a transition region in contact with the second semiconductor region, the transition region having a first concentration of the first charge carriers; and
forming, in the first semiconductor region, a contact region having a second concentration of the first charge carriers that is higher than the first concentration;
forming, in the first semiconductor region, a damage region configured for reducing lifetime and/or mobility of the first charge carriers of the damage region as compared to the lifetime and/or the mobility of the first charge carriers of the contact region and the transition region.

15. The method of claim 14 , wherein creating the damage region comprises applying a damage implantation of a damage region doping material between the contact region and the transition region.

16. The method of claim 15 , wherein the damage doping material is not activated during manufacturing of the semiconductor device.

17. The method of claim 15 , wherein the damage region doping material comprises at least one of germanium, silicon, carbon, helium, neon, argon, xenon, and krypton, and wherein an implantation dose of the damage implantation is in the range of 10 11 cm −2 to 10 15 cm −2 .

Assignees

• Infineon Technologies Ag

Inventors

• Haertl Andreas
• Hille Frank
• Santos Rodriguez Francisco Javier
• Schloegl Daniel
• Stegner Andre Rainer
• Weiss Christoph

Classifications

• H10P30/208

  of electrically inactive species · CPC title

• H10P30/204

  into Group IV semiconductors · CPC title

• H10P14/418

  the conductive layers comprising transition metals · CPC title

• H10D64/011

  of electrodes ohmically coupled to a semiconductor · CPC title

• H01L29/063 Primary

  Electricity · mapped topic