Method for preparing an aluminum doped silicon carbide crystal by providing a compound including aluminum and oxygen in a capsule comprised of a first and second material
US-12006591-B2 · Jun 11, 2024 · US
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Ruland Gary E patents
Ruland Gary E is listed as an inventor on 8 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Ruland Gary E |
| Total patents | 8 |
| First publication | Jul 28, 2015 |
| Latest publication | Jun 11, 2024 |
Notable patents
Publications ranked by popularity score, then publication date.
Silicon carbide crystals and methods for producing same
US-2021269937-A1 · Sep 2, 2021 · US
Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof
US-RE48378-E · Jan 5, 2021 · US
High quality silicon carbide crystals and method of making the same
US-10793972-B1 · Oct 6, 2020 · US
Large diameter, high quality SiC single crystals, method and apparatus
US-RE46315-E · Feb 21, 2017 · US
Method for synthesizing ultrahigh-purity silicon carbide
US-9388509-B2 · Jul 12, 2016 · US
Vanadium doped SiC single crystals and method thereof
US-9322110-B2 · Apr 26, 2016 · US
Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof
US-9090989-B2 · Jul 28, 2015 · US
Recent patents
Latest publications not already listed above.
No data yet.
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Ii Vi Delaware Inc | 4 |
| Ii Vi Inc | 4 |
| Ii Vi Advanced Mat Llc | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| C30B29/36 | 8 |
| C30B23/02 | 3 |
| C30B23/00 | 3 |
| C30B23/06 | 2 |
| C30B23/002 | 2 |