Method for preparing an aluminum doped silicon carbide crystal by providing a compound including aluminum and oxygen in a capsule comprised of a first and second material

Patent metadata

Field	Value
Publication number	US-12006591-B2
Application number	US-202017029746-A
Country	US
Kind code	B2
Filing date	Sep 23, 2020
Priority date	Mar 2, 2020
Publication date	Jun 11, 2024
Grant date	Jun 11, 2024

Abstract

The present disclosure generally relates to silicon carbide crystals which may be used in optical applications, and to methods for producing the same. In one form, a composition includes an aluminum doped silicon carbide crystal having residual nitrogen and boron impurities. The concentration of aluminum in the silicon carbide crystal is greater than the combined concentrations of nitrogen and boron in the silicon carbide crystal, and the silicon carbide crystal includes an optical absorption coefficient of less than about 0.4 cm −1 at a wavelength in a range between about 400 nm to about 800 nm.

First claim

What is claimed is:

1. A method for preparing an aluminum doped silicon carbide crystal, comprising:
providing a silicon carbide source material and a silicon carbide monocrystalline seed in a growth crucible;
providing a solid aluminum dopant source material comprising a compound including aluminum and oxygen in a capsule; and
heating the growth crucible, with the capsule positioned therein, in a manner effective for producing silicon and carbon bearing vapors from the silicon carbide source material in the growth crucible and aluminum bearing vapors from the solid aluminum dopant source material in the capsule, and for precipitating the silicon and carbon bearing vapors and the aluminum bearing vapors on the silicon carbide monocrystalline seed to grow the aluminum doped silicon carbide crystal;
wherein the capsule includes a first material resistant to degradation from the aluminum dopant source and aluminum bearing vapors and a second material resistant to degradation from the silicon and carbon bearing vapors, the first material being different from the second material, and
wherein the capsule includes an inner component at least partially formed of the first material and an outer component disposed about the inner component and at least partially formed of the second material, wherein the outer component is in the form of an outer crucible, and wherein the inner component is in the form of an inner crucible positioned in the outer crucible.

2. The method of claim 1 , wherein the heating is further effective for creating solid aluminum oxide in the capsule and thereafter melting the solid aluminum oxide.

3. The method of claim 1 , wherein the first material includes a refractory metal selected from the group consisting of tantalum, molybdenum, tungsten, rhenium and alloys thereof.

4. The method of claim 3 , wherein the second material is graphite.

5. The method of claim 3 , wherein the second material is a refractory metal carbide.

6. The method of claim 5 , wherein the refractory metal carbide is tantalum carbide or niobium carbide.

7. The method of claim 1 , wherein the capsule includes a layer of refractory carbide.

8. The method of claim 1 , wherein the capsule further includes a capillary in gas phase communication with the aluminum dopant source material.

9. The method of claim 1 , wherein the aluminum dopant source material includes aluminum oxide.

10. The method of claim 1 , wherein the outer crucible includes a lid, wherein the inner crucible includes a lid, and wherein the lid of the outer crucible is removable to position the inner crucible in the outer crucible.

11. The method of claim 10 , further comprising providing a capillary channel through the lid of the outer crucible and the lid of the inner crucible, and releasing the aluminum bearing vapors from the capsule through the capillary channel.

12. The method of claim 10 , wherein the outer crucible includes the second material such that an external surface of the outer crucible is resistant to the degradation from the silicon and carbon bearing vapors, and wherein the inner crucible includes the first material such that an internal surface of the inner crucible is resistant to the degradation from the aluminum dopant source and the aluminum bearing vapors.

13. A method for preparing an aluminum doped silicon carbide crystal, comprising:
providing a silicon carbide source material and a silicon carbide monocrystalline seed in a growth crucible;
providing a solid aluminum dopant source material comprising a compound including aluminum and oxygen in a capsule; and
heating the growth crucible, with the capsule positioned therein, in a manner effective for producing silicon and carbon bearing vapors from the silicon carbide source material in the growth crucible and aluminum bearing vapors from the solid aluminum dopant source material in the capsule, and for precipitating the silicon and carbon bearing vapors and the aluminum bearing vapors on the silicon carbide monocrystalline seed to grow the aluminum doped silicon carbide crystal;
wherein the capsule includes a first material resistant to degradation from the aluminum dopant source and aluminum bearing vapors and a second material resistant to degradation from the silicon and carbon bearing vapors, the first material being different from the second material, and
wherein the capsule includes an inner crucible at least partially formed of the first material and an outer crucible at least partially formed of the second material, and wherein the inner crucible of the capsule is positioned in the outer crucible of the capsule.

Assignees

• Ii Vi Delaware Inc
• Ii Vi Advanced Mat Llc

Inventors

• Zwieback Ilya
• Rengarajan Varatharajan
• Souzis Andrew E
• Ruland Gary E

Classifications

• G02B1/02 Primary

  made of crystals, e.g. rock-salt, semi-conductors (G02B1/08 takes precedence) · CPC title

• C30B29/66

  Crystals of complex geometrical shape, e.g. tubes, cylinders · CPC title

• C30B29/60

  characterised by shape · CPC title

• C30B23/02 Primary

  Epitaxial-layer growth · CPC title

• H10D62/60

  Impurity distributions or concentrations · CPC title