Pvt-method and device for producing single crystals in a safe manner with regard to the process
US-2024376633-A1 · Nov 14, 2024 · US
Heating of the deposition chamber, the substrate or the materials to be evaporated
Heating of the deposition chamber, the substrate or the materials to be evaporated · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B23/06 |
| Official title | Heating of the deposition chamber, the substrate or the materials to be evaporated |
| Display label | Heating of the deposition chamber, the substrate or the materials to be evaporated |
| Total patents | 235 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 8 |
| 2016 | 19 |
| 2017 | 13 |
| 2018 | 11 |
| 2019 | 22 |
| 2020 | 20 |
| 2021 | 28 |
| 2022 | 28 |
| 2023 | 19 |
| 2024 | 30 |
| 2025 | 30 |
| 2026 | 7 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Crystal growth apparatus, method for manufacturing silicon carbide single crystal, silicon carbide single crystal substrate, and silicon carbide epitaxial substrate
US-10494735-B2 · Dec 3, 2019 · US
Heat-insulating shield member and single crystal manufacturing apparatus having the same
US-2019330765-A1 · Oct 31, 2019 · US
Method for producing silicon carbide single crystal
US-2019301051-A1 · Oct 3, 2019 · US
Method for evaluating tantalum carbide
US-2019250096-A1 · Aug 15, 2019 · US
Furnace for seeded sublimation of wide band gap crystals
US-10344396-B2 · Jul 9, 2019 · US
Methods for the synthesis, purification and crystal growth of inorganic crystals for hard radiation detectors
US-2019177878-A1 · Jun 13, 2019 · US
SiC single crystal sublimation growth method and apparatus
US-10294584-B2 · May 21, 2019 · US
Silicon carbide single crystal wafer and method of manufacturing a silicon carbide single crystal ingot
US-10202706-B2 · Feb 12, 2019 · US
System for growth of large aluminum nitride single crystals with thermal-gradient control
US-10106913-B2 · Oct 23, 2018 · US
Self-limited organic molecular beam epitaxy for precisely growing ultrathin C8-BTBT, PTCDA and their heterojunctions on surface
US-2018298520-A1 · Oct 18, 2018 · US
P-type 4h-sic single crystal and method for producing p-type 4h-sic single crystal
US-2018274125-A1 · Sep 27, 2018 · US
Method for manufacturing silicon carbide single crystal
US-2018251909-A1 · Sep 6, 2018 · US
Method for evaluating internal stress of silicon carbide monocrystalline wafer and method for predicting warpage in silicone carbide monocrystalline wafer
US-10031089-B2 · Jul 24, 2018 · US
Molecular beam epitaxy under vector strong magnetic field and in-situ characterization apparatus thereof
US-2018179666-A1 · Jun 28, 2018 · US
Method for Formation of a Transition Metal Dichalcogenide (TMDC) Material Layer
US-2018144935-A1 · May 24, 2018 · US
Device for growing monocrystalline crystal
US-2018057925-A1 · Mar 1, 2018 · US
Semi-insulating silicon carbide monocrystal and method of growing the same
US-9893152-B2 · Feb 13, 2018 · US
Furnace for seeded sublimation of wide band gap crystals
US-2018002828-A1 · Jan 4, 2018 · US
Method of manufacturing silicon carbide single crystal
US-9856583-B2 · Jan 2, 2018 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C30B23/06?
- CPC C30B23/06 is the Cooperative Patent Classification code for “Heating of the deposition chamber, the substrate or the materials to be evaporated.”
- How many patents are filed under CPC C30B23/06 (Heating of the deposition chamber, the substrate or the materials to be evaporated)?
- Our database includes 235 publications tagged with this CPC code.
- Is patent activity under CPC C30B23/06 growing?
- Publication counts under this code: 30 in 2024 vs 30 in 2025 (latest complete years).