Technologies for a ribbon field effect transistor with two-dimensional electron or hole gas channels
US-2026006820-A1 · Jan 1, 2026 · US
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Rogan Carly patents
Rogan Carly is listed as an inventor on 19 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Rogan Carly |
| Total patents | 19 |
| First publication | Dec 28, 2023 |
| Latest publication | Jan 1, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Spin-to-charge conversion using extrinsic spin hall effect and orbital hall effect
US-2025311639-A1 · Oct 2, 2025 · US
Magnetoelectric spin–orbit (meso) device with unconventional spin-to-charge conversion
US-2025311636-A1 · Oct 2, 2025 · US
Coupled multi-layer magnetoelectric, ferroelectric, and ferromagnetic structures
US-2025311376-A1 · Oct 2, 2025 · US
Magnetoelectric spin–orbit (meso) device with antiferromagnetic spin injection and spin absorption for increased output voltage
US-2025221318-A1 · Jul 3, 2025 · US
Architectures and methods to modulate contact resistance in 2d materials for use in field effect transistor devices
US-2025107147-A1 · Mar 27, 2025 · US
Two-terminal ferroelectric perovskite diode memory element
US-2025008852-A1 · Jan 2, 2025 · US
Negative capacitance field effect transistor (ncfet) devices
US-2025006840-A1 · Jan 2, 2025 · US
P-type perovskite ferroelectric field effect transistor (fefet) devices
US-2025006839-A1 · Jan 2, 2025 · US
Perovskite oxide field effect transistor with highly doped source and drain
US-2025006791-A1 · Jan 2, 2025 · US
Recent patents
Latest publications not already listed above.
Perovskite-based field effect transistor (fet) devices enabled by epitaxial lateral overgrowth
US-2024429301-A1 · Dec 26, 2024 · US
Beol contact metals for 2d transistors
US-2024222461-A1 · Jul 4, 2024 · US
Technologies for perovskite transistors
US-2024113212-A1 · Apr 4, 2024 · US
Technologies for transistors with a thin-film ferroelectric
US-2024113220-A1 · Apr 4, 2024 · US
Stacked perovskite ferroelectric field effect transistor (fefet) devices
US-2024105822-A1 · Mar 28, 2024 · US
Vertical ferrorelectric field-effect transistor (fefet) devices
US-2024105810-A1 · Mar 28, 2024 · US
Ferrorelectric field-effect transistor (fefet) devices with low operating voltage capabilities
US-2024097031-A1 · Mar 21, 2024 · US
Stacked single crystal transition-metal dichalcogenide using seeded growth
US-2023420511-A1 · Dec 28, 2023 · US
Self-assembled monolayer on a dielectric for transition metal dichalcogenide growth for stacked 2d channels
US-2023420510-A1 · Dec 28, 2023 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Intel Corp | 19 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D64/689 | 12 |
| H10D99/00 | 11 |
| H10D62/80 | 9 |
| H10D30/701 | 8 |
| H10D30/6757 | 8 |