Thin film transistor with insulating portion between source/drian electrode and gate insulating layer, and manufacturing method thereof
US-11784258-B2 · Oct 10, 2023 · US
Park Kuhyun is listed as an inventor on 11 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Park Kuhyun |
| Total patents | 11 |
| First publication | Mar 8, 2016 |
| Latest publication | Oct 10, 2023 |
Publications ranked by popularity score, then publication date.
US-11784258-B2 · Oct 10, 2023 · US
US-2020335631-A1 · Oct 22, 2020 · US
US-10139670-B2 · Nov 27, 2018 · US
US-10115832-B2 · Oct 30, 2018 · US
US-10114253-B2 · Oct 30, 2018 · US
US-9966027-B2 · May 8, 2018 · US
US-2017288060-A1 · Oct 5, 2017 · US
US-2017192297-A1 · Jul 6, 2017 · US
US-2017038638-A1 · Feb 9, 2017 · US
US-2016300541-A1 · Oct 13, 2016 · US
Latest publications not already listed above.
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Boe Technology Group Co Ltd | 12 |
| Hefei Boe Optoelectronics Tech | 11 |
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D86/60 | 4 |
| H10D30/6755 | 4 |
| H01L29/7869 | 3 |
| G02F1/134363 | 3 |
| G02F2001/134372 | 3 |