High electron mobility transistor with reduced access resistance and method for manufacturing a high electron mobility transistor with reduced access resistance
US-12453113-B2 · Oct 21, 2025 · US
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Morvan Erwan patents
Morvan Erwan is listed as an inventor on 15 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Morvan Erwan |
| Total patents | 15 |
| First publication | Apr 14, 2016 |
| Latest publication | Oct 21, 2025 |
Notable patents
Publications ranked by popularity score, then publication date.
Dope p galium nitride electronic component
US-2024088281-A1 · Mar 14, 2024 · US
High electron mobility transistor with reduced access resistance and method for manufacturing a high electron mobility transistor with reduced access resistance
US-2023011499-A1 · Jan 12, 2023 · US
Polarization circuit of a power component
US-11158629-B2 · Oct 26, 2021 · US
Electronic component with a high-electron-mobility heterojunction
US-10854722-B2 · Dec 1, 2020 · US
Polarization circuit of a power component
US-2020168600-A1 · May 28, 2020 · US
Electronic component with a high-electron-mobility heterojunction
US-2020066891-A1 · Feb 27, 2020 · US
Optoelectronic device comprising a light-emitting component and a transistor
US-10497743-B2 · Dec 3, 2019 · US
Method for forming an implanted area for a heterojunction transistor that is normally blocked
US-10164081-B2 · Dec 25, 2018 · US
Electron gas confinement heterojunction transistor
US-10050112-B2 · Aug 14, 2018 · US
Recent patents
Latest publications not already listed above.
Enhanced normally-off high electron mobility heterojunction transistor
US-10050137-B2 · Aug 14, 2018 · US
ENHANCEMENT-MODE TRANSISTOR COMPRISING AN AlGaN/GaN HETEROJUNCTION AND A P-DOPED DIAMOND GATE
US-2018182878-A1 · Jun 28, 2018 · US
Enhanced normally-off high electron mobility heterojunction transistor
US-2017229567-A1 · Aug 10, 2017 · US
Electron gas confinement heterojunction transistor
US-2017229550-A1 · Aug 10, 2017 · US
Method for forming an implanted area for a heterojunction transistor that is normally blocked
US-2016104791-A1 · Apr 14, 2016 · US
Major assignees
Companies most often associated with this inventor's publications.
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D62/8503 | 14 |
| H01L29/2003 | 13 |
| H10D62/824 | 11 |
| H10D30/015 | 10 |
| H10D30/475 | 10 |