Arsenic-doped source/drain with phosphorus-doped contact region for dopant diffusion control
US-2026096162-A1 · Apr 2, 2026 · US
This page is not indexed by search engines while we improve data quality.
Ehlert Robert patents
Ehlert Robert is listed as an inventor on 16 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Ehlert Robert |
| Total patents | 16 |
| First publication | Nov 18, 2021 |
| Latest publication | Apr 2, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Gate structures to enable lower subthreshold slope in gallium nitride-based transistors
US-12439627-B2 · Oct 7, 2025 · US
Gate-all-around transistor without cavity spacer structures
US-2025311298-A1 · Oct 2, 2025 · US
Dopant engineering to suppress epitaxial misshapenness in n-type epitaxial source-drain transistors
US-2025311337-A1 · Oct 2, 2025 · US
Co-integrated gallium nitride (GaN) and complementary metal oxide semiconductor (CMOS) integrated circuit technology
US-12432964-B2 · Sep 30, 2025 · US
Integrated circuit structure with varied epitaxial source or drain structures and device types
US-2025220870-A1 · Jul 3, 2025 · US
PGaN enhancement mode HEMTs with dopant diffusion spacer
US-12224337-B2 · Feb 11, 2025 · US
Transistors with antimony and phosphorus doped epitaxial source/drain layers
US-2025006790-A1 · Jan 2, 2025 · US
Source or drain structures with high phosphorous dopant concentration
US-11955482-B2 · Apr 9, 2024 · US
Source or drain structures with phosphorous and arsenic dopants
US-2024063274-A1 · Feb 22, 2024 · US
Recent patents
Latest publications not already listed above.
Gate structures to enable lower subthreshold slope in gallium nitride-based transistors
US-2023197840-A1 · Jun 22, 2023 · US
Pre-flow of p-type dopant precursor to enable thinner p-gan layers in gallium nitride-based transistors
US-2023132548-A1 · May 4, 2023 · US
pGaN ENHANCEMENT MODE HEMTs WITH DOPANT DIFFUSION SPACER
US-2022199816-A1 · Jun 23, 2022 · US
Co-integrated gallium nitride (gan) and complementary metal oxide semiconductor (cmos) integrated circuit technology
US-2022093790-A1 · Mar 24, 2022 · US
Transition metal-iii-nitride alloys for robust high performance hemts
US-2021399119-A1 · Dec 23, 2021 · US
Source or drain structures with high phosphorous dopant concentration
US-2021358908-A1 · Nov 18, 2021 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Intel Corp | 16 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D62/151 | 9 |
| H10D62/8503 | 8 |
| H10D30/475 | 8 |
| H10D62/824 | 7 |
| H10D84/038 | 6 |