Semiconductor structure and manufacturing method thereof
US-2026101531-A1 · Apr 9, 2026 · US
This page is not indexed by search engines while we improve data quality.
Chen Ching Yu patents
Chen Ching Yu is listed as an inventor on 20 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Chen Ching Yu |
| Total patents | 20 |
| First publication | Jan 2, 2020 |
| Latest publication | Apr 9, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Semiconductor device and manufacturing method thereof
US-2026068210-A1 · Mar 5, 2026 · US
Semiconductor structure including different barrier layers and method for manufacturing the same
US-2026026051-A1 · Jan 22, 2026 · US
High-electron-mobility transistor and method of manufacturing
US-2025301689-A1 · Sep 25, 2025 · US
Barrier structure configured to increase performance of III-V devices
US-12419074-B2 · Sep 16, 2025 · US
Method of manufacturing high-electron-mobility transistor
US-12356651-B2 · Jul 8, 2025 · US
Barrier structure configured to increase performance of iii-v devices
US-2024387719-A1 · Nov 21, 2024 · US
Vacancy-rich silicon for use with a gallium nitride epitaxial layer
US-2024141553-A1 · May 2, 2024 · US
Semiconductor structure and method of manufacture
US-2024079486-A1 · Mar 7, 2024 · US
High-electron-mobility transistor and method of manufacturing
US-2023387282-A1 · Nov 30, 2023 · US
Recent patents
Latest publications not already listed above.
Strain relief trenches for epitaxial growth
US-2023377881-A1 · Nov 23, 2023 · US
Strain relief trenches for epitaxial growth
US-11804374-B2 · Oct 31, 2023 · US
Barrier structure configured to increase performance of III-V devices
US-11715792-B2 · Aug 1, 2023 · US
High electron mobility transistor (HEMT) device and method of forming same
US-11522067-B2 · Dec 6, 2022 · US
Barrier structure configured to increase performance of iii-v devices
US-2022376086-A1 · Nov 24, 2022 · US
Strain relief trenches for epitaxial growth
US-2022130670-A1 · Apr 28, 2022 · US
Barrier structure configured to increase performance of iii-v devices
US-2021242337-A1 · Aug 5, 2021 · US
High electron mobility transistor (hemt) device and method of forming same
US-2021226040-A1 · Jul 22, 2021 · US
High electron mobility transistor (HEMT) device and method of forming same
US-11011614-B2 · May 18, 2021 · US
High electron mobility transistor (hemt) device and method of forming same
US-2020006522-A1 · Jan 2, 2020 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Taiwan Semiconductor Mfg Co Ltd | 23 |
| Taiwan Semiconductor Mfg Company Ltd | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D62/8503 | 19 |
| H10D30/015 | 19 |
| H10D30/475 | 19 |
| H01L29/2003 | 13 |
| H10P14/3416 | 13 |