Semiconductor transistor device and method of manufacturing the same
US-2026082680-A1 · Mar 19, 2026 · US
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Aichinger Thomas patents
Aichinger Thomas is listed as an inventor on 81 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Aichinger Thomas |
| Total patents | 81 |
| First publication | May 19, 2016 |
| Latest publication | Mar 19, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Method for measuring an internal capacitance of a transistor device
US-2026009830-A1 · Jan 8, 2026 · US
SEMICONDUCTOR DEVICE INCLUDING A SiC SEMICONDUCTOR BODY
US-2025338550-A1 · Oct 30, 2025 · US
Method of forming a sic/gate dielectric interface layer in a semiconductor device
US-2025323039-A1 · Oct 16, 2025 · US
Methods for forming Wide Band Gap Semiconductor Devices Using Different Reactive Gas Species
US-2025279278-A1 · Sep 4, 2025 · US
Method of forming a wide band gap semiconductor device
US-2025246433-A1 · Jul 31, 2025 · US
Method for annealing a gate insulation layer on a wide band gap semiconductor substrate
US-12341012-B2 · Jun 24, 2025 · US
Vertical power semiconductor device including a sensor electrode
US-2025151324-A1 · May 8, 2025 · US
Vertical power semiconductor device including silicon carbide (sic) semiconductor body
US-12294018-B2 · May 6, 2025 · US
Transistor Device
US-2025107202-A1 · Mar 27, 2025 · US
Recent patents
Latest publications not already listed above.
Power semiconductor device including silicon carbide (sic) semiconductor body
US-2025089343-A1 · Mar 13, 2025 · US
Vertical power semiconductor device including silicon carbide (sic) semiconductor body
US-2025089323-A1 · Mar 13, 2025 · US
Wide band gap semiconductor device
US-2025056869-A1 · Feb 13, 2025 · US
Transistor device
US-2025015148-A1 · Jan 9, 2025 · US
Silicon carbide device
US-2025006814-A1 · Jan 2, 2025 · US
Semiconductor device comprising a high-k gate dielectric multilayer laminate structure and a method for manufacturing thereof
US-2024405092-A1 · Dec 5, 2024 · US
Method of producing a semiconductor device having a ferroelectric gate stack
US-12107128-B2 · Oct 1, 2024 · US
Semiconductor device having an optical device degradation sensor
US-11940489-B2 · Mar 26, 2024 · US
Method of manufacturing semiconductor device with silicon carbide body
US-11881512-B2 · Jan 23, 2024 · US
Wide band gap semiconductor device
US-2023352520-A1 · Nov 2, 2023 · US
Semiconductor device having a ferroelectric gate stack
US-11791383-B2 · Oct 17, 2023 · US
Trench power device with enhanced charge carrier mobility
US-2023178615-A1 · Jun 8, 2023 · US
Semiconductor device including a trench gate structure
US-2023163167-A1 · May 25, 2023 · US
Semiconductor Device Having an Optical Device Degradation Sensor
US-2023121426-A1 · Apr 20, 2023 · US
Silicon carbide field-effect transistor including shielding areas
US-11626477-B2 · Apr 11, 2023 · US
Semiconductor device having a ferroelectric gate stack
US-2023035144-A1 · Feb 2, 2023 · US
SiC device with channel regions extending along at least one of the (1-100) plane and the (-1100) plane and methods of manufacturing thereof
US-11462611-B2 · Oct 4, 2022 · US
Sic mosfet with reduced on-resistance
US-2022262906-A1 · Aug 18, 2022 · US
Transistor device with a varying gate runner resistivity per area
US-11417747-B2 · Aug 16, 2022 · US
Silicon Carbide Devices, Semiconductor Devices and Methods for Forming Silicon Carbide Devices and Semiconductor Devices
US-2022246745-A1 · Aug 4, 2022 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Infineon Technologies Ag | 80 |
| Infineon Technologies Austria Ag | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D62/8325 | 75 |
| H10D30/668 | 66 |
| H01L29/1608 | 60 |
| H10D62/393 | 56 |
| H10D12/031 | 53 |