Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction
US-10249714-B2 · Apr 2, 2019 · US
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Patent family 54355756
This patent family groups 8 related publications across US. Members often share priority claims or equivalent filings in different countries.
| Field | Value |
|---|---|
| Family ID | 54355756 |
| Family type | — |
| Earliest priority | May 1, 2014 |
| First filing country | US |
| Member publications | 8 |
| Countries | US |
| Representative publication | US10249714B2 — Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction |
Representative publication
Best representative member for this family based on priority and filing country.
US10249714B2 — Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction (published Apr 2, 2019)
Member publications
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