Microelectronic assemblies with inductors in direct bonding regions
US-2024355768-A1 · Oct 24, 2024 · US
having material changed during the connecting
having material changed during the connecting · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10W80/754 |
| Official title | {having material changed during the connecting} |
| Display label | having material changed during the connecting |
| Total patents | 362 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is growing.
| Year | Patents |
|---|---|
| 2015 | 17 |
| 2016 | 21 |
| 2017 | 20 |
| 2018 | 29 |
| 2019 | 28 |
| 2020 | 27 |
| 2021 | 29 |
| 2022 | 41 |
| 2023 | 54 |
| 2024 | 44 |
| 2025 | 45 |
| 2026 | 7 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Interconnect structures for assembly of semiconductor structures including superconducting integrated circuits
US-2018012932-A1 · Jan 11, 2018 · US
Interconnect structures and semiconductor structures for assembly of cryogenic electronic packages
US-2017373044-A1 · Dec 28, 2017 · US
Wafer-to-wafer bonding structure
US-2017358553-A1 · Dec 14, 2017 · US
Semiconductor device, method for manufacturing semiconductor device, and electronic apparatus
US-2017354199-A1 · Dec 14, 2017 · US
Semiconductor device and method for production of semiconductor device
US-2017278891-A1 · Sep 28, 2017 · US
Method for producing a chip assemblage
US-2017271298-A1 · Sep 21, 2017 · US
Semiconductor device and manufacturing method
US-2017263666-A1 · Sep 14, 2017 · US
Hybrid bond using a copper alloy for yield improvement
US-9728521-B2 · Aug 8, 2017 · US
Method for manufacturing semiconductor device with metal-containing film layer at bonding surface thereof
US-9716076-B2 · Jul 25, 2017 · US
Multi-Strike Process for Bonding
US-2017194278-A1 · Jul 6, 2017 · US
Semiconductor device and method for production of semiconductor device
US-9679937-B2 · Jun 13, 2017 · US
Electronic apparatus and manufacturing method for an electronic apparatus having multiple substrates directly electrically connected through an insulating film
US-9666627-B2 · May 30, 2017 · US
Interconnect structures and methods for fabricating interconnect structures
US-2017133336-A1 · May 11, 2017 · US
Semiconductor device and method of manufacturing semiconductor device
US-2017111037-A1 · Apr 20, 2017 · US
Dual-interface ic card module
US-2017092612-A1 · Mar 30, 2017 · US
Power package module of multiple power chips and method of manufacturing power chip unit
US-2017062386-A1 · Mar 2, 2017 · US
Semiconductor chip with patterned underbump metallization and polymer film
US-9576923-B2 · Feb 21, 2017 · US
Multi-strike process for bonding
US-9576929-B1 · Feb 21, 2017 · US
Electronic Device with Multi-Layer Contact
US-2017025375-A1 · Jan 26, 2017 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10W80/754?
- CPC H10W80/754 is the Cooperative Patent Classification code for “having material changed during the connecting.”
- How many patents are filed under CPC H10W80/754 (having material changed during the connecting)?
- Our database includes 362 publications tagged with this CPC code.
- Is patent activity under CPC H10W80/754 growing?
- Publication counts under this code: 44 in 2024 vs 45 in 2025 (latest complete years).