Dummy components in integrated circuits
US-2026005065-A1 · Jan 1, 2026 · US
of silicon-containing layers
of silicon-containing layers · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10P50/263 |
| Official title | {of silicon-containing layers} |
| Display label | of silicon-containing layers |
| Total patents | 59 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 6 |
| 2016 | 7 |
| 2017 | 5 |
| 2018 | 13 |
| 2019 | 7 |
| 2020 | 4 |
| 2021 | 2 |
| 2022 | 8 |
| 2023 | 3 |
| 2024 | 3 |
| 2026 | 1 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Semiconductor structure and a manufacturing method thereof
US-12166133-B2 · Dec 10, 2024 · US
Gate structure of a semiconductor device and method of forming same
US-12154831-B2 · Nov 26, 2024 · US
Gate Structure of a Semiconductor Device and Method of Forming Same
US-2024387294-A1 · Nov 21, 2024 · US
Gate Structure of a Semiconductor Device and Method of Forming Same
US-2023317525-A1 · Oct 5, 2023 · US
Gate structure of a semiconductor device and method of forming same
US-11688648-B2 · Jun 27, 2023 · US
Flowable film formation and treatments
US-11615966-B2 · Mar 28, 2023 · US
Metal Gates And Manufacturing Methods Thereof
US-2022344489-A1 · Oct 27, 2022 · US
Array substrate and manufacturing method thereof
US-11448932-B2 · Sep 20, 2022 · US
Metal gates and manufacturing methods thereof
US-11404555-B2 · Aug 2, 2022 · US
Semiconductor structure and a manufacturing method thereof
US-2022165886-A1 · May 26, 2022 · US
Gate Structure of a Semiconductor Device and Method of Forming Same
US-2022165624-A1 · May 26, 2022 · US
Etching method and etching apparatus
US-2022051899-A1 · Feb 17, 2022 · US
Gate structure of a semiconductor device and method of forming same
US-11251092-B2 · Feb 15, 2022 · US
Flowable film formation and treatments
US-2022020594-A1 · Jan 20, 2022 · US
Gate structure of a semiconductor device and method of forming same
US-2021407862-A1 · Dec 30, 2021 · US
Methods and apparatus for patterning substrates using asymmetric physical vapor deposition
US-10927450-B2 · Feb 23, 2021 · US
Metal Gates and Manufacturing Methods Thereof
US-2020266282-A1 · Aug 20, 2020 · US
Array substrate and manufacturing method thereof
US-2020209694-A1 · Jul 2, 2020 · US
Methods and apparatus for patterning substrates using asymmetric physical vapor deposition
US-2020199741-A1 · Jun 25, 2020 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10P50/263?
- CPC H10P50/263 is the Cooperative Patent Classification code for “of silicon-containing layers.”
- How many patents are filed under CPC H10P50/263 (of silicon-containing layers)?
- Our database includes 59 publications tagged with this CPC code.
- Is patent activity under CPC H10P50/263 growing?
- Publication counts under this code: 3 in 2023 vs 3 in 2024 (latest complete years).