Nitride semiconductor device
US-2017373200-A1 · Dec 28, 2017 · US
of Schottky-barrier gate FETs
of Schottky-barrier gate FETs · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10D84/86 |
| Official title | of Schottky-barrier gate FETs |
| Display label | of Schottky-barrier gate FETs |
| Total patents | 151 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is growing.
| Year | Patents |
|---|---|
| 2015 | 27 |
| 2016 | 20 |
| 2017 | 16 |
| 2018 | 19 |
| 2019 | 13 |
| 2020 | 16 |
| 2021 | 5 |
| 2022 | 9 |
| 2023 | 6 |
| 2024 | 8 |
| 2025 | 10 |
| 2026 | 2 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Electronic device having schottky diode
US-2017373199-A1 · Dec 28, 2017 · US
GaN semiconductor device structure and method of fabrication by substrate replacement
US-9818692-B2 · Nov 14, 2017 · US
Semiconductor devices with integrated schotky diodes and methods of fabrication
US-2017294531-A1 · Oct 12, 2017 · US
Integrated circuits and devices with interleaved transistor elements, and methods of their fabrication
US-9780090-B2 · Oct 3, 2017 · US
Semiconductor device and manufacturing method of the same
US-2017271333-A1 · Sep 21, 2017 · US
Avalanche-rugged silicon carbide (SiC) power Schottky rectifier
US-9741873-B2 · Aug 22, 2017 · US
Semiconductor devices with integrated Schottky diodes and methods of fabrication
US-9685345-B2 · Jun 20, 2017 · US
High bandgap schottky contact layer device
US-2017133368-A1 · May 11, 2017 · US
Semiconductor device
US-2017098649-A1 · Apr 6, 2017 · US
Power amplifier die having multiple amplifiers
US-9589865-B2 · Mar 7, 2017 · US
Power amplifier die having multiple amplifiers
US-2017033031-A1 · Feb 2, 2017 · US
Integrated power module with improved isolation and thermal conductivity
US-9536803-B2 · Jan 3, 2017 · US
GaN SEMICONDUCTOR DEVICE STRUCTURE AND METHOD OF FABRICATION BY SUBSTRATE REPLACEMENT
US-2016380090-A1 · Dec 29, 2016 · US
Semiconductor device and semiconductor circuit including the device
US-2016372555-A1 · Dec 22, 2016 · US
Switching device for switching radio frequency signals
US-2016351567-A1 · Dec 1, 2016 · US
Semiconductor device and method for fabricating a semiconductor device
US-9502421-B2 · Nov 22, 2016 · US
Semiconductor device
US-2016329890-A1 · Nov 10, 2016 · US
Microfluidic impingement jet cooled embedded diamond GaN HEMT
US-9484284-B1 · Nov 1, 2016 · US
Semiconductor apparatus
US-9484342-B2 · Nov 1, 2016 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10D84/86?
- CPC H10D84/86 is the Cooperative Patent Classification code for “of Schottky-barrier gate FETs.”
- How many patents are filed under CPC H10D84/86 (of Schottky-barrier gate FETs)?
- Our database includes 151 publications tagged with this CPC code.
- Is patent activity under CPC H10D84/86 growing?
- Publication counts under this code: 8 in 2024 vs 10 in 2025 (latest complete years).