Semiconductor apparatus

Patent metadata

Field	Value
Publication number	US-9484342-B2
Application number	US-201514938803-A
Country	US
Kind code	B2
Filing date	Nov 11, 2015
Priority date	Jun 5, 2013
Publication date	Nov 1, 2016
Grant date	Nov 1, 2016

Abstract

A semiconductor apparatus includes a substrate; a nitride semiconductor layer formed on the substrate; a transistor formed on the nitride semiconductor layer, and including a source electrode, a gate electrode, and a drain electrode disposed in this order; and a diode formed on the nitride semiconductor layer, and including an anode electrode and a cathode electrode disposed in this order. The semiconductor apparatus has a transistor/diode pair in which the source electrode, the gate electrode, the drain electrode, the anode electrode, and the cathode electrode are sequentially disposed in this order, and the drain electrode of the transistor and the anode electrode of the diode are connected by a drain/anode common electrode wiring and serve as a common electrode.

First claim

What is claimed is:

1. A semiconductor apparatus comprising:
a substrate;
a nitride semiconductor layer formed on the substrate;
a transistor formed on the nitride semiconductor layer, and including a source electrode, a gate electrode, and a drain electrode disposed in this order; and
a diode formed on the nitride semiconductor layer, and including an anode electrode and a cathode electrode disposed in this order,
wherein the semiconductor apparatus has a plurality of transistor/diode pairs in each of which the source electrode, the gate electrode, the drain electrode, the anode electrode, and the cathode electrode are disposed in this order, and the drain electrode of the transistor and the anode electrode of the diode are connected by a drain/anode common electrode wiring for serving as a common electrode, and
the plurality of transistor/diode pairs are disposed at regular intervals on the nitride semiconductor layer with the source electrode of the transistor or the cathode electrode of the diode being shared by two of the plurality of transistor/diode pairs adjacent to each other.

2. A semiconductor apparatus comprising:
a substrate;
a nitride semiconductor layer formed on the substrate;
a transistor formed on the nitride semiconductor layer, and including a source electrode, a gate electrode, and a drain electrode disposed in this order; and
a diode formed on the nitride semiconductor layer, and including an anode electrode and a cathode electrode disposed in this order,
wherein the semiconductor apparatus has a plurality of transistor/diode pairs in each of which the source electrode, the gate electrode, the drain electrode, the anode electrode, and the cathode electrode are disposed in this order, and the drain electrode of the transistor and the anode electrode of the diode are connected by a drain/anode common electrode wiring for serving as a common electrode, and
the source electrode, the gate electrode and the drain electrode of the transistor and the anode electrode and the cathode electrode of the diode are symmetrically disposed with respect to the source electrode or the cathode electrode.

3. The semiconductor apparatus according to claim 1 , wherein the gate electrode of the transistor is disposed to surround the source electrode of the transistor.

4. The semiconductor apparatus according to claim 1 , wherein the anode electrode of the diode is disposed to surround the cathode electrode of the diode.

5. The semiconductor apparatus according to claim 1 , wherein a p-type semiconductor layer is provided between the nitride semiconductor layer and the gate electrode of the transistor.

6. The semiconductor apparatus according to claim 1 , wherein a p-type semiconductor layer is provided between the nitride semiconductor layer and the anode electrode of the diode, and the nitride semiconductor layer and the anode electrode are electrically in contact with each other.

7. A semiconductor apparatus comprising:
a substrate;
a nitride semiconductor layer formed on the substrate;
a transistor formed on the nitride semiconductor layer, and including a source electrode, a gate electrode, and a drain electrode disposed in this order; and
a diode formed on the nitride semiconductor layer, and including an anode electrode and a cathode electrode disposed in this order,
wherein the semiconductor apparatus has a transistor/diode pair in which the source electrode, the gate electrode, the drain electrode, the anode electrode, and the cathode electrode are disposed in this order, and the drain electrode of the transistor and the anode electrode of the diode are connected by a drain/anode common electrode wiring for serving as a common electrode,
the source electrode, the gate electrode, the drain/anode common electrode wiring, and the cathode electrode are respectively connected to a source electrode pad, a gate electrode pad, a drain/anode common electrode pad, and a cathode electrode pad, through respective electrode lead-out wirings, and
at least one of the source electrode pad, the gate electrode pad, the drain/anode common electrode pad, and the cathode electrode pad is formed on a rear surface of the substrate through a hole penetrating from a front surface of the nitride semiconductor layer to the rear surface of the substrate.

8. The semiconductor apparatus according to claim 7 , wherein at least one of the drain/anode common electrode pad and the cathode electrode pad is formed on the rear surface of the substrate.

9. A semiconductor apparatus comprising:
a substrate;
a nitride semiconductor layer formed on the substrate;
a transistor formed on the nitride semiconductor layer, and including a source electrode, a gate electrode, and a drain electrode disposed in this order; and
a diode formed on the nitride semiconductor layer, and including an anode electrode and a cathode electrode disposed in this order,
wherein the semiconductor apparatus has a transistor/diode pair in which the source electrode, the gate electrode, the drain electrode, the anode electrode, and the cathode electrode are disposed in this order, and the drain electrode of the transistor and the anode electrode of the diode are connected by a drain/anode common electrode wiring for serving as a common electrode,
a first insulating layer, a wiring layer, and a second insulating layer are stacked in this order on an active region of the transistor and the diode that include the source electrode, the gate electrode, the drain/anode common electrode wiring, and the cathode electrode,
each of the first insulating layer and the second insulating layer has a plurality of openings,
the source electrode, the gate electrode, the drain/anode common electrode wiring, and the cathode electrode are electrically connected to a source electrode wiring layer, a gate electrode wiring layer, a drain/anode common electrode wiring layer, and a cathode electrode wiring layer, each layer formed in the wiring layer, respectively through the plurality of openings formed in the first insulating layer, and
the respective wiring layers formed in the wiring layer are electrically connected to a source electrode pad, a gate electrode pad, a drain/anode common electrode pad, and a cathode electrode, each pad formed on the second insulating layer, respectively through the plurality of openings formed in the second insulating layer.

10. The semiconductor apparatus according to claim 1 , wherein
at least one of the source electrode, the gate electrode, the drain/anode common electrode wiring, and the cathode electrode is connected to an electrode pad formed on a rear surface of the substrate, through a hole penetrating from a front surface of the nitride semiconductor layer to the rear surface of the substrate,
a first insulating layer, a plurality of wiring layers, and a second insulating layer are stacked in this order on the other electrodes,
each of the first insulating layer and the second insulating layer has a plurality of openings,
the other electrodes are electrically connected to the respective wiring layers through the plurality of openings formed in the first insulating layer, and
the respective wiring layers are electrically connected to electrode pads formed on the second insulating layer through the plurality of openings formed in the second insulating layer.

11. A semiconductor apparatus comprising:
a substrate;
a nitride semiconductor layer formed on the substrate;
a transistor formed on the nitride semiconductor layer, and including a drain electrode, a gate electrode, and a source electrode disposed in this order; and
a diode formed on the nitride semiconductor layer, and including a cathode elect

Assignees

• Panasonic Ip Man Co Ltd

Inventors

• Handa Hiroyuki
• Umeda Hidekazu
• Tamura Satoshi
• Ueda Tetsuzo

Classifications

• H10W20/20

  Interconnections within wafers or substrates, e.g. through-silicon vias [TSV] · CPC title

• H10D84/403

  Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors · CPC title

• H10D84/86

  of Schottky-barrier gate FETs · CPC title

• H10D64/257

  for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes (source or drain electrodes of TFTs H10D30/673) · CPC title

• H10D64/256

  for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies (source or drain electrodes of TFTs H10D30/673) · CPC title