Method of manufacturing silicon carbide seed crystal and method of manufacturing silicon carbide ingot
US-2022403546-A1 · Dec 22, 2022 · US
Physical imperfections
Physical imperfections · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10D62/50 |
| Official title | Physical imperfections |
| Display label | Physical imperfections |
| Total patents | 79 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 14 |
| 2016 | 8 |
| 2017 | 8 |
| 2018 | 7 |
| 2019 | 6 |
| 2020 | 2 |
| 2021 | 5 |
| 2022 | 10 |
| 2023 | 6 |
| 2024 | 7 |
| 2025 | 5 |
| 2026 | 1 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Semiconductor device having a programming element
US-11444090-B2 · Sep 13, 2022 · US
Semiconductor device and semiconductor device fabrication method
US-11424238-B2 · Aug 23, 2022 · US
Silicon carbide semiconductor device and method for manufacturing the same
US-11387326-B2 · Jul 12, 2022 · US
Methods and Devices Related to Radio Frequency Devices
US-2022115499-A1 · Apr 14, 2022 · US
Method and apparatus for manufacturing silicon carbide single crystal, and silicon carbide single crystal ingot
US-2022112623-A1 · Apr 14, 2022 · US
Silicon carbide seed crystal and method of manufacturing the same, and method of manufacturing silicon carbide ingot
US-2022025543-A1 · Jan 27, 2022 · US
Silicon carbide seed crystal and method of manufacturing silicon carbide ingot
US-2022025542-A1 · Jan 27, 2022 · US
Semiconductor device having a device fixed on a substrate with an adhesive
US-11233029-B2 · Jan 25, 2022 · US
Methods and devices related to radio frequency devices
US-11217453-B2 · Jan 4, 2022 · US
Method of forming a semiconductor device
US-2021327886-A1 · Oct 21, 2021 · US
Skyrmion diode and method of manufacturing the same
US-11024726-B2 · Jun 1, 2021 · US
Silicon carbide semiconductor device and method for manufacturing the same
US-2021111251-A1 · Apr 15, 2021 · US
Semiconductor device and semiconductor device fabrication method
US-2021098443-A1 · Apr 1, 2021 · US
Methods and Devices Related to Radio Frequency Devices
US-2021043497-A1 · Feb 11, 2021 · US
Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US-10741399-B2 · Aug 11, 2020 · US
Skyrmion diode and method of manufacturing the same
US-2020105912-A1 · Apr 2, 2020 · US
Skyrmion diode and method of manufacturing the same
US-10497800-B2 · Dec 3, 2019 · US
Method of forming semiconductor device using polishing resistance pattern
US-2019341358-A1 · Nov 7, 2019 · US
Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US-10361083-B2 · Jul 23, 2019 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10D62/50?
- CPC H10D62/50 is the Cooperative Patent Classification code for “Physical imperfections.”
- How many patents are filed under CPC H10D62/50 (Physical imperfections)?
- Our database includes 79 publications tagged with this CPC code.
- Is patent activity under CPC H10D62/50 growing?
- Publication counts under this code: 7 in 2024 vs 5 in 2025 (latest complete years).