Methods and devices related to radio frequency devices

Patent metadata

Field	Value
Publication number	US-11217453-B2
Application number	US-202016903588-A
Country	US
Kind code	B2
Filing date	Jun 17, 2020
Priority date	Aug 8, 2019
Publication date	Jan 4, 2022
Grant date	Jan 4, 2022

Abstract

A method includes providing a semiconductor substrate having a first side and a second side opposite to the first side, forming at least one radio frequency device at the first side; thinning the semiconductor substrate from the second side; and processing the second side of the thinned semiconductor substrate to reduce leakage currents or to improve a radio frequency linearity of the at least one radio frequency device.

First claim

What is claimed is:

1. A method, comprising:
providing a semiconductor substrate having a first side and a second side opposite to the first side,
forming at least one radio frequency device at the first side;
thinning the semiconductor substrate from the second side; and
processing the second side of the thinned semiconductor substrate to reduce leakage currents or to improve a radio frequency linearity of the at least one radio frequency device, wherein processing the second side of the thinned semiconductor substrate to reduce leakage currents or to improve a radio frequency linearity comprises performing a Bosch etching.

2. The method of claim 1 , wherein processing the second side of the thinned semiconductor substrate to reduce leakage currents or to improve a radio frequency linearity comprises reducing a density of free charge carriers at the second side of the thinned semiconductor substrate.

3. The method of claim 1 , wherein processing the second side of the thinned semiconductor substrate to reduce leakage currents or to improve a radio frequency linearity comprises providing charge carriers at the second side of the thinned semiconductor substrate.

4. The method of claim 3 , wherein providing charge carriers comprises introducing a dopant in the second side of the thinned semiconductor substrate.

5. The method of claim 3 , wherein providing carriers comprises forming a doped layer on the second side of the thinned semiconductor substrate.

6. The method of claim 1 , wherein processing the second side of the thinned semiconductor substrate to reduce leakage currents or to improve a radio frequency linearity comprises introducing defects at the second side of the semiconductor substrate.

7. The method of claim 1 , wherein processing the second side of the thinned semiconductor substrate to reduce leakage currents or to improve a radio frequency linearity additionally provides ion gettering at the second side of the thinned semiconductor substrate.

8. The method of claim 1 , further comprising forming a heat spreading layer on the second side of the thinned semiconductor substrate.

9. A method, comprising:
providing a semiconductor substrate having a first side and a second side opposite to the first side,
forming at least one radio frequency device at the first side;
thinning the semiconductor substrate from the second side;
processing the second side of the thinned semiconductor substrate to reduce leakage currents or to improve a radio frequency linearity of the at least one radio frequency device, comprising ion implantation or Bosch etching; and
forming an aluminum oxide layer on the second side of the thinned semiconductor substrate.

10. A method, comprising:
providing a semiconductor substrate having a first side and a second side opposite to the first side,
forming at least two radio frequency devices at the first side;
thinning the semiconductor substrate from the second side; and
processing the second side of the thinned semiconductor substrate to reduce leakage currents or to improve a radio frequency linearity of the at least two radio frequency devices, comprising performing at least one of a ion implantation or an etching from the second side of the thinned semiconductor substrate limited to an area between the at least two radio frequency devices.

11. The method of claim 10 , wherein the ion implantation extends into a device layer on the first side of the thinned semiconductor substrate.

12. A method, comprising:
providing a semiconductor substrate having a first side and a second side opposite to the first side,
forming at least one radio frequency device at the first side;
thinning the semiconductor substrate from the second side; and
processing the second side of the thinned semiconductor substrate to reduce leakage currents or to improve a radio frequency linearity of the at least one radio frequency device,
wherein the semiconductor substrate comprises a first semiconductor layer on the first side, a second semiconductor layer on the second side and an insulating layer between the first semiconductor layer and the second semiconductor layer, wherein processing the second side of the thinned semiconductor substrate to reduce leakage currents or to improve a radio frequency linearity comprises processing the thinned second semiconductor layer using ion implantation or Bosch etching.

Assignees

• Infineon Tech Dresden Gmbh & Co Kg

Inventors

• Taddiken Hans
• Butschkow Christian
• Cattaneo Andrea
• Feick Henning
• Heiss Dominik
• Kadow Christoph
• Seidel Uwe
• Solomko Valentyn
• Steltenpohl Anton

Classifications

• H10P90/124 Primary

  by processing the backside of the wafers · CPC title

• H10P36/07

  of silicon-on-insulator structures · CPC title

• H10P30/208

  of electrically inactive species · CPC title

• H10P30/204

  into Group IV semiconductors · CPC title

• H10W74/43

  comprising oxides, nitrides or carbides, e.g. ceramics or glasses · CPC title