Magnetic element, skyrmion memory, skyrmion memory-device, solid-state electronic device, data-storage device, data processing and communication device
US-2017178748-A1 · Jun 22, 2017 · US
US11024726B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11024726-B2 |
| Application number | US-201916685852-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 15, 2019 |
| Priority date | Mar 7, 2016 |
| Publication date | Jun 1, 2021 |
| Grant date | Jun 1, 2021 |
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Official abstract text for this publication.
The present disclosure provides a skyrmion diode using skyrmions as information carriers. The skyrmion diode includes a magnetic body and a conductive body. The magnetic body has a skyrmion which is used as information carrier. The conductive body is disposed on or under the magnetic body. The conductive body includes a Dzyaloshinskii-Moriya interaction (DMI) region and a defect region. The DMI region is provided to induce DMI in a region of the magnetic body corresponding to the DMI region by the spin-orbit coupling of the conductive body and magnetic moments of the magnetic body. The defect region is provided to prevent the DMI from being induced in a region of the magnetic body corresponding to the defect region.
Opening claim text (preview).
What is claimed is: 1. A method of manufacturing a skyrmion diode, the method comprising: providing a magnetic body including a skyrmion serving as an information carrier; and disposing a conductive body on or under the magnetic body, wherein the conductive body includes a notch portion at one side portion thereof and a remaining portion other side than the notch portion, and wherein the notch portion of the conductive body serves as a defect region for preventing a Dzyaloshinskii-Moriya interaction (DMI) from being induced in a region of the magnetic body corresponding to the notch portion, wherein the remaining portion of the conductive body serves as a DMI region for inducing the DMI in a region of the magnetic body corresponding to the remaining portion by spin-orbit coupling of the conductive body and magnetic moments of the magnetic body, wherein the skyrmion in the magnetic body moves by a spin-polarized current only through the region of the magnetic body corresponding to the DMI region of the conductive body and the skyrmion selectively turns around the region of the magnetic body corresponding to the defect region of the conductive body in a direction based on a spin orientation to allow the skyrmion to have diode characteristics, wherein the magnetic body is provided without having the notch portion, and wherein the magnetic body covers the entire conductive body. 2. The method of claim 1 , wherein the spin-polarized current is supplied to the magnetic body. 3. The method of claim 1 , wherein the spin-polarized current is supplied to the conductive body. 4. The method of claim 1 , wherein the spin-polarized current is supplied to both of the magnetic body and the conductive body. 5. The method of claim 1 , wherein the notch portion has a semicircular shape. 6. The method of claim 1 , wherein the notch portion has a triangular shape. 7. The method of claim 1 , wherein the notch portion has a rectangular shape.
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