Bidirectional thyristor device with asymmetric characteristics
US-12495565-B2 · Dec 9, 2025 · US
Base regions of thyristors
Base regions of thyristors · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10D62/192 |
| Official title | {Base regions of thyristors} |
| Display label | Base regions of thyristors |
| Total patents | 39 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 6 |
| 2016 | 4 |
| 2017 | 4 |
| 2018 | 6 |
| 2020 | 3 |
| 2021 | 2 |
| 2022 | 2 |
| 2023 | 4 |
| 2024 | 6 |
| 2025 | 2 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Semiconductor device and method for operating a semiconductor device
US-2025015172-A1 · Jan 9, 2025 · US
System and method for bi-directional trench power switches
US-12148819-B2 · Nov 19, 2024 · US
ESD protection circuit with isolated SCR for negative voltage operation
US-12057443-B2 · Aug 6, 2024 · US
System and method for bi-directional trench power switches
US-2024113210-A1 · Apr 4, 2024 · US
Semiconductor device with bi-directional double-base trench power switches
US-11881525-B2 · Jan 23, 2024 · US
Bidirectional thyristor device with asymmetric characteristics
US-2024014302-A1 · Jan 11, 2024 · US
Bi-directional bi-polar device for ESD protection
US-11862735-B2 · Jan 2, 2024 · US
MOS(metal oxide silicon) controlled thyristor device
US-11784247-B2 · Oct 10, 2023 · US
Mos(metal oxide silicon) controlled thyristor device
US-2023087416-A1 · Mar 23, 2023 · US
System and method for bi-directional trench power switches
US-2023048984-A1 · Feb 16, 2023 · US
Bi-directional bi-polar device for esd protection
US-2023027045-A1 · Jan 26, 2023 · US
Esd protection circuit with isolated scr for negative voltage operation
US-2022189946-A1 · Jun 16, 2022 · US
ESD protection circuit with isolated SCR for negative voltage operation
US-11302688-B2 · Apr 12, 2022 · US
Bypass thyristor device with gas expansion cavity within a contact plate
US-11139219-B2 · Oct 5, 2021 · US
ESD protection circuit with isolated SCR for negative voltage operation
US-11049852-B2 · Jun 29, 2021 · US
Bypass thyristor device with gas expansion cavity within a contact plate
US-2020144141-A1 · May 7, 2020 · US
Bipolar junction transistor and method of fabricating the same
US-10600894-B2 · Mar 24, 2020 · US
Bipolar junction transistor and method of fabricating the same
US-2020013884-A1 · Jan 9, 2020 · US
Esd protection circuit with isolated scr for negative voltage operation
US-2018350794-A1 · Dec 6, 2018 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10D62/192?
- CPC H10D62/192 is the Cooperative Patent Classification code for “Base regions of thyristors.”
- How many patents are filed under CPC H10D62/192 (Base regions of thyristors)?
- Our database includes 39 publications tagged with this CPC code.
- Is patent activity under CPC H10D62/192 growing?
- Publication counts under this code: 6 in 2024 vs 2 in 2025 (latest complete years).