Ruggedized symmetrically bidirectional bipolar power transistor
US-11978788-B2 · May 7, 2024 · US
having built-in localised breakdown or breakover regions, e.g. self-protected against destructive spontaneous firing
having built-in localised breakdown or breakover regions, e.g. self-protected against destructive spontaneous firing · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10D18/211 |
| Official title | {having built-in localised breakdown or breakover regions, e.g. self-protected against destructive spontaneous firing} |
| Display label | having built-in localised breakdown or breakover regions, e.g. self-protected against destructive spontaneous firing |
| Total patents | 64 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 5 |
| 2016 | 6 |
| 2017 | 9 |
| 2018 | 13 |
| 2019 | 5 |
| 2020 | 8 |
| 2021 | 5 |
| 2022 | 5 |
| 2023 | 2 |
| 2024 | 4 |
| 2025 | 2 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Imaging element, stacked-type imaging element and solid-state imaging apparatus
US-2024096914-A1 · Mar 21, 2024 · US
Ruggedized symmetrically bidirectional bipolar power transistor
US-2023299188-A1 · Sep 21, 2023 · US
Ruggedized symmetrically bidirectional bipolar power transistor
US-11699746-B2 · Jul 11, 2023 · US
Electrostatic protection element
US-2022278230-A1 · Sep 1, 2022 · US
Esd protection circuit with isolated scr for negative voltage operation
US-2022189946-A1 · Jun 16, 2022 · US
ESD protection circuit with isolated SCR for negative voltage operation
US-11302688-B2 · Apr 12, 2022 · US
Imaging element, stacked-type imaging element and solid-state imaging apparatus
US-2022093660-A1 · Mar 24, 2022 · US
Imaging element, stacked type imaging element and solid-state imaging apparatus
US-11222912-B2 · Jan 11, 2022 · US
High surge transient voltage suppressor
US-11152351-B2 · Oct 19, 2021 · US
Ruggedized symmetrically bidirectional bipolar power transistor
US-2021313461-A1 · Oct 7, 2021 · US
Semiconductor device having an edge termination region comprising a first edge termination region of a second conductivity type adjacent to a second edge termination region of a first conductivity type
US-11094779-B2 · Aug 17, 2021 · US
Ruggedized symmetrically bidirectional bipolar power transistor
US-11069797-B2 · Jul 20, 2021 · US
ESD protection circuit with isolated SCR for negative voltage operation
US-11049852-B2 · Jun 29, 2021 · US
High surge transient voltage suppressor
US-2020303370-A1 · Sep 24, 2020 · US
High surge transient voltage suppressor
US-10720422-B2 · Jul 21, 2020 · US
Silicon-controlled rectifier structure and manufacturing method thereof
US-10700186-B2 · Jun 30, 2020 · US
Electrostatic discharge protection structure, method for manufacturing an electrostatic discharge protection structure, and vertical thyristor structure
US-10672758-B2 · Jun 2, 2020 · US
Unidirectional ESD protection with buried breakdown thyristor device
US-10629715-B2 · Apr 21, 2020 · US
Silicon-controlled rectifier structure and manufacturing method therefor
US-2020058781-A1 · Feb 20, 2020 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10D18/211?
- CPC H10D18/211 is the Cooperative Patent Classification code for “having built-in localised breakdown or breakover regions, e.g. self-protected against destructive spontaneous firing.”
- How many patents are filed under CPC H10D18/211 (having built-in localised breakdown or breakover regions, e.g. self-protected against destructive spontaneous firing)?
- Our database includes 64 publications tagged with this CPC code.
- Is patent activity under CPC H10D18/211 growing?
- Publication counts under this code: 4 in 2024 vs 2 in 2025 (latest complete years).