Ruggedized symmetrically bidirectional bipolar power transistor

Patent metadata

Field	Value
Publication number	US-11978788-B2
Application number	US-202318323202-A
Country	US
Kind code	B2
Filing date	May 24, 2023
Priority date	May 25, 2016
Publication date	May 7, 2024
Grant date	May 7, 2024

Abstract

The present application teaches, among other innovations, power semiconductor devices in which breakdown initiation regions, on BOTH sides of a die, are located inside the emitter/collector regions, but laterally spaced away from insulated trenches which surround the emitter/collector regions. Preferably this is part of a symmetrically-bidirectional power device of the “B-TRAN” type. In one advantageous group of embodiments (but not all), the breakdown initiation regions are defined by dopant introduction through the bottom of trench portions which lie within the emitter/collector region. In one group of embodiments (but not all), these can advantageously be separated trench portions which are not continuous with the trench(es) surrounding the emitter/collector region(s).

First claim

What is claimed is:

1. A semiconductor device, comprising, on both surfaces of a first-conductivity-type semiconductor die:
an emitter/collector region of second-conductivity-type, laterally surrounded by a first insulated trench, a portion of the emitter/collector region has a first breakdown voltage from the emitter/collector to a base region of first-conductivity-type;
a base contact region of first-conductivity-type and making ohmic contact to the base region of first-conductivity-type, the base contact region laterally separated from the emitter/collector region by the first insulated trench; and
a breakdown initiation region disposed at least partially below the emitter/collector region at a non-zero distance from sides of the first insulated trench, the breakdown initiation region comprising additional first-conductivity-type dopant atoms compared to the first-conductivity-type semiconductor die, and the breakdown initiation region has a second breakdown voltage from the emitter/collector to the breakdown initiation region, the second breakdown voltage lower than the first breakdown voltage.

2. The semiconductor device of claim 1 wherein the breakdown initiation region is below the emitter/collector region.

3. The semiconductor device of claim 1 , wherein the first-conductivity-type is p-type.

4. The semiconductor device of claim 1 , wherein the second breakdown voltage is more than 1000V.

5. The semiconductor device of claim 1 , wherein the semiconductor die is silicon.

6. The semiconductor device of claim 1 , wherein the breakdown initiation region changes a junction depth of the emitter/collector region.

7. The semiconductor device of claim 1 , wherein the breakdown initiation region does not change a junction depth of the emitter/collector region.

8. The semiconductor device of claim 1 , wherein the emitter/collector region comprises one or more segments each having a breakdown initiation region disposed at least partially thereunder.

9. The semiconductor device of claim 1 :
wherein the first insulated trench comprises a conductive electrode within the first insulated trench; and further comprising
multiple trench segments underlain by an additional dopant component which locally reduces the first breakdown voltage;
wherein the multiple trench segments are not continuous with the first insulated trench, and some of the multiple trench segments are continuous with each other.

10. A bidirectional bipolar power transistor comprising:
an upper emitter/collector region of second-conductivity-type, laterally surrounded by an upper insulated trench, a portion of the upper emitter/collector region has a first breakdown voltage from the upper emitter/collector to a base region of first-conductivity-type;
an upper base contact region of first-conductivity-type and making ohmic contact to the base region of first-conductivity-type, the upper base contact region laterally separated from the upper emitter/collector region by the upper insulated trench; and
an upper breakdown initiation region disposed at least partially below the upper emitter/collector region at a non-zero distance from sides of the upper insulated trench, the upper breakdown initiation region comprising additional first-conductivity-type dopant atoms compared to the base region of first-conductivity-type, and the upper breakdown initiation region has a second breakdown voltage from the upper emitter/collector to the upper breakdown initiation region, the second breakdown voltage lower than the first breakdown voltage.

11. The bidirectional bipolar power transistor of claim 10 wherein the upper breakdown initiation region is below the upper emitter/collector region.

12. The bidirectional bipolar power transistor of claim 10 , wherein the first-conductivity-type is p-type.

13. The bidirectional bipolar power transistor of claim 10 , wherein the second breakdown voltage is more than 1000V.

14. The bidirectional bipolar power transistor of claim 10 , wherein a semiconductor die, within which the upper emitter/collector region and the upper breakdown initiation are disposed, is silicon.

15. The bidirectional bipolar power transistor of claim 10 , wherein the upper breakdown initiation region changes a junction depth of the upper emitter/collector region.

16. The bidirectional bipolar power transistor of claim 10 , wherein the upper breakdown initiation region does not change a junction depth of the upper emitter/collector region.

17. The bidirectional bipolar power transistor of claim 10 , further comprising:
a lower emitter/collector region of second-conductivity-type, laterally surrounded by a lower insulated trench, a portion of the lower emitter/collector region has a third breakdown voltage from the lower emitter/collector to the base region of first-conductivity-type;
a lower base contact region of first-conductivity-type and making ohmic contact to the base region of first-conductivity-type, the lower base contact region laterally separated from the lower emitter/collector region by the lower insulated trench; and
a lower breakdown initiation region disposed at least partially above the lower emitter/collector region at a non-zero distance from sides of the lower insulated trench, the lower breakdown initiation region comprising additional first-conductivity-type dopant atoms compared to the base region of first-conductivity-type, and the lower breakdown initiation region has a fourth breakdown voltage from the lower emitter/collector to the lower breakdown initiation region, the fourth breakdown voltage lower than the third breakdown voltage.

18. The bidirectional bipolar power transistor of claim 17 , wherein the third breakdown voltage is more than 1000V.

Assignees

• Ideal Power Inc

Inventors

• Blanchard Richard A
• Alexander William C

Classifications

• H10D62/83

  being Group IV materials, e.g. B-doped Si or undoped Ge · CPC title

• H10D64/118

  Electrodes comprising insulating layers having particular dielectric or electrostatic properties, e.g. having static charges · CPC title

• H10D64/117 Primary

  Recessed field plates, e.g. trench field plates or buried field plates · CPC title

• H10D64/112

  comprising multiple field plate segments · CPC title

• H10D62/127

  of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs · CPC title