Compound semiconductor device and method with high concentration dopant layer in regrown compound semiconductor
US-10804358-B2 · Oct 13, 2020 · US
Electricity
Electricity · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01L29/0891 |
| Official title | — |
| Display label | Electricity (mapped technology topic) |
| Total patents | 85 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 1 |
| 2016 | 6 |
| 2017 | 9 |
| 2018 | 13 |
| 2019 | 15 |
| 2020 | 16 |
| 2021 | 6 |
| 2022 | 2 |
| 2023 | 5 |
| 2024 | 9 |
| 2025 | 3 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Low voltage (power) junction FET with all-around junction gate
US-10777555-B2 · Sep 15, 2020 · US
Semiconductor devices with via structure and package structures comprising the same
US-10741644-B2 · Aug 11, 2020 · US
Method of making a dual-gate HEMT
US-10734498-B1 · Aug 4, 2020 · US
Semiconductor device
US-10680091-B2 · Jun 9, 2020 · US
Field-effect transistor having a bypass electrode connected to the gate electrode connection section
US-10672876-B2 · Jun 2, 2020 · US
Semiconductor devices with raised doped crystalline structures
US-10665708-B2 · May 26, 2020 · US
Field effect transistor and process of forming the same
US-2020161465-A1 · May 21, 2020 · US
Enhancement-mode Device and Method for Manufacturing the Same
US-2020119177-A1 · Apr 16, 2020 · US
Method for forming trench semiconductor device having schottky barrier structure
US-2020105877-A1 · Apr 2, 2020 · US
Field effect transistor (FET) structure with integrated gate connected diodes
US-10593665-B2 · Mar 17, 2020 · US
Method for forming trench semiconductor device having Schottky barrier structure
US-10593760-B2 · Mar 17, 2020 · US
Field effect transistor and process of forming the same
US-10580887-B2 · Mar 3, 2020 · US
Semiconductor device and method of manufacturing semiconductor device
US-10580648-B2 · Mar 3, 2020 · US
Low voltage (power) junction FET with all-around junction gate
US-10573648-B2 · Feb 25, 2020 · US
Method for forming trench semiconductor device having schottky barrier structure
US-2020044027-A1 · Feb 6, 2020 · US
Thermally stable ammonia gas sensor using ZnO-functionalized AlGaN/GaN heterostructure transistor
US-10488364-B2 · Nov 26, 2019 · US
Low voltage (power) junction fet with all-around junction gate
US-2019341382-A1 · Nov 7, 2019 · US
Semiconductor device, related manufacturing method, and related electronic device
US-10431588-B2 · Oct 1, 2019 · US
Semiconductor devices with regrown contacts and methods of fabrication
US-10403718-B2 · Sep 3, 2019 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01L29/0891?
- CPC H01L29/0891 is the Cooperative Patent Classification code for “Electricity.”
- How many patents are filed under CPC H01L29/0891 (Electricity)?
- Our database includes 85 publications tagged with this CPC code.
- Is patent activity under CPC H01L29/0891 growing?
- Publication counts under this code: 9 in 2024 vs 3 in 2025 (latest complete years).