Semiconductor device and method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-10580648-B2
Application number	US-201816120914-A
Country	US
Kind code	B2
Filing date	Sep 4, 2018
Priority date	Sep 4, 2017
Publication date	Mar 3, 2020
Grant date	Mar 3, 2020

Abstract

In a first aspect of a present inventive subject matter, a semiconductor device includes a first semiconductor layer that is an electron-supply layer containing as a major component a first semiconductor crystal with a metastable crystal structure; and a second semiconductor layer that is an electron-transit layer containing as a major component a second semiconductor crystal with a hexagonal crystal structure. The first semiconductor crystal contained in the first semiconductor layer is different in composition from the second semiconductor crystal comprised in the second semiconductor layer.

First claim

What is claimed is:

1. A semiconductor device comprising:
a first semiconductor layer that is an electron-supply layer comprising as a major component a first semiconductor crystal with a metastable crystal structure; and
a second semiconductor layer that is an electron-transit layer comprising as a major component a second semiconductor crystal with a hexagonal crystal structure,
the first semiconductor crystal comprised in the first semiconductor layer being different in composition from the second semiconductor crystal comprised in the second semiconductor layer.

2. The semiconductor device of claim 1 , wherein
the metastable crystal structure of the first semiconductor crystal comprised in the first semiconductor layer is a trigonal crystal structure.

3. The semiconductor device of claim 1 , wherein
the metastable crystal structure of the first semiconductor crystal comprised in the first semiconductor layer is a hexagonal crystal structure.

4. The semiconductor device of claim 1 , wherein
the first semiconductor crystal comprised in the first semiconductor layer comprises gallium.

5. The semiconductor device of claim 4 , wherein
the first semiconductor crystal comprised in the first semiconductor layer further comprises aluminum.

6. The semiconductor device of claim 1 , wherein
the second semiconductor crystal comprised in the second semiconductor layer comprises gallium.

7. The semiconductor device of claim 1 , wherein
the second semiconductor crystal comprised in the second semiconductor layer comprises gallium.

8. The semiconductor device of claim 1 , wherein
the second semiconductor crystal comprised in the second semiconductor layer comprises a mixed crystal comprising ε-Ga 2 O 3 .

9. The semiconductor device of claim 1 further comprising:
a first electrode electrically connected to the first semiconductor layer; and
a second electrode electrically connected to the first semiconductor layer,
the semiconductor device being a power device.

10. The semiconductor device of claim 1 , wherein
the semiconductor device is a high frequency device.

11. The semiconductor device of claim 1 , wherein
the second semiconductor crystal comprised in the second semiconductor layer comprises gallium.

12. The semiconductor device of claim 1 , wherein
the second semiconductor crystal comprised in the second semiconductor layer comprises ε-Ga 2 O 3 .

13. A system comprising:
a semiconductor device of claim 1 .

14. A method of manufacturing a semiconductor device comprising:
forming a first semiconductor layer that is to be an electron-supply layer comprising as a major component a first semiconductor crystal with a metastable crystal structure by use of a mist chemical vapor deposition method; and
forming a second semiconductor layer that is to be an electron-transit layer comprising as a major component a second semiconductor crystal with a hexagonal crystal structure by use of the mist chemical vapor deposition method, the second semiconductor crystal that is different from the first semiconductor crystal in composition.

15. A method of manufacturing a semiconductor device comprising:
forming a first semiconductor layer that is to be an electron-supply layer comprising as a major component a first semiconductor crystal with a metastable crystal structure; and
forming a second semiconductor layer that is to be an electron-transit layer comprising as a major component a second semiconductor crystal with a hexagonal crystal structure on the first semiconductor layer.

16. The method of claim 15 further comprising:
annealing the first semiconductor layer.

17. The method of claim 16 , wherein
a step terrace structure is formed on a surface of the first semiconductor layer by the annealing the first semiconductor layer.

18. The method of claim 15 , wherein
the metastable crystal structure of the first semiconductor layer comprises a trigonal crystal structure or a hexagonal crystal structure.

Assignees

• Flosfia Inc
• Univ Kyoto

Inventors

• Jinno Riena
• Fujita Shizuo
• Kaneko Kentaro
• Matsuda Tokiyoshi
• Shinohe Takashi
• Hitora Toshimi

Classifications

• H10P14/3458

  Monocrystalline · CPC title

• H10P14/3234

  being oxide semiconducting materials (Group IIB-VIA semiconductors H10P14/3224) · CPC title

• H10P14/2924

  Structures · CPC title

• H10P14/2921

  being crystalline insulating materials · CPC title

• H10P14/2918

  being semiconductor metal oxides (Group IIB-VIA materials H10P14/2913) · CPC title