Silicon germanium-on-insulator finfet
US-2016379867-A1 · Dec 29, 2016 · US
Electricity
Electricity · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01L21/2254 |
| Official title | — |
| Display label | Electricity (mapped technology topic) |
| Total patents | 395 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 39 |
| 2016 | 42 |
| 2017 | 58 |
| 2018 | 52 |
| 2019 | 52 |
| 2020 | 58 |
| 2021 | 28 |
| 2022 | 22 |
| 2023 | 16 |
| 2024 | 18 |
| 2025 | 7 |
| 2026 | 3 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Formation of strained fins in a finfet device
US-2016379895-A1 · Dec 29, 2016 · US
Lateral bipolar junction transistor having graded SiGe base
US-9525027-B2 · Dec 20, 2016 · US
Abrupt source/drain junction formation using a diffusion facilitation layer
US-9520397-B2 · Dec 13, 2016 · US
Ion implantation for improved etch performance
US-9520290-B1 · Dec 13, 2016 · US
Silicon germanium-on-insulator FinFET
US-9515185-B2 · Dec 6, 2016 · US
Method for processing a carrier and an electronic component
US-2016307753-A1 · Oct 20, 2016 · US
Method of Manufacturing a Semiconductor Device Having a Rear-Side Insert Structure
US-2016300719-A1 · Oct 13, 2016 · US
Method for manufacturing a semiconductor device and a semiconductor device
US-9449968-B2 · Sep 20, 2016 · US
Substrate treatment method and substrate treating apparatus
US-9437448-B2 · Sep 6, 2016 · US
Method for doping impurities, method for manufacturing semiconductor device, and semiconductor device
US-2016247681-A1 · Aug 25, 2016 · US
Semiconductor component and method for producing it
US-2016197152-A1 · Jul 7, 2016 · US
Silicon germanium-on-insulator finfet
US-2016190303-A1 · Jun 30, 2016 · US
Polycrystalline Silicon Substrate and Manufacturing Method thereof
US-2016189961-A1 · Jun 30, 2016 · US
Dielectric structures in solar cells
US-9373731-B2 · Jun 21, 2016 · US
Process for contact doping
US-9362122-B2 · Jun 7, 2016 · US
Thin-film transistor, method of manufacturing the same, and organic light-emitting display device including the same
US-2016149053-A1 · May 26, 2016 · US
Silicon-on-insulator substrates having selectively formed strained and relaxed device regions
US-9349861-B1 · May 24, 2016 · US
Methods for doping fin field-effect transistors and fin field-effect transistor
US-2016071973-A1 · Mar 10, 2016 · US
Doping of a substrate via a dopant containing polymer film
US-2016035572-A1 · Feb 4, 2016 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01L21/2254?
- CPC H01L21/2254 is the Cooperative Patent Classification code for “Electricity.”
- How many patents are filed under CPC H01L21/2254 (Electricity)?
- Our database includes 395 publications tagged with this CPC code.
- Is patent activity under CPC H01L21/2254 growing?
- Publication counts under this code: 18 in 2024 vs 7 in 2025 (latest complete years).