Substrate treatment method and substrate treating apparatus

Patent metadata

Field	Value
Publication number	US-9437448-B2
Application number	US-201314417698-A
Country	US
Kind code	B2
Filing date	Jun 7, 2013
Priority date	Aug 27, 2012
Publication date	Sep 6, 2016
Grant date	Sep 6, 2016

Abstract

A hydrofluoric acid is supplied to a surface of a substrate, and a native oxide film formed on the surface is corroded to be removed, exposing silicon in the surface of the substrate. Then, a rinse solution such as alcohols is supplied to the surface of the substrate, and then, the hydrofluoric acid is washed off from the surface. After that, a dopant solution, which is a dopant-containing chemical solution, is supplied to the surface of the substrate. The dopant solution comes into contact with the surface of the substrate, which is not hydrogen-terminated and has silicon exposed, thereby forming a dopant-containing monolayer thin film on the surface in a short period of time.

First claim

The invention claimed is:

1. A substrate treatment method for forming a dopant-containing thin film on a surface of a substrate, the method comprising:
providing a substrate that is without an oxide film; and
supplying a dopant solution to the surface of said substrate that is without an oxide film to form a dopant-containing thin film thereon; and
performing said supplying step without performing hydrogen-termination to the surface of said substrate.

2. The substrate treatment method according to claim 1 , comprising:
an oxide film removing step of supplying a hydrofluoric acid to a surface of said substrate to remove an oxide film formed on the surface thereof, to form said substrate that is without an oxide film;
a rinse step of supplying a rinse solution to said surface to wash off the hydrofluoric acid after said oxide film removing step; and
a thin film forming step of supplying said dopant solution to said surface to form said thin film after said rinse step.

3. The substrate treatment method according to claim 2 , wherein said oxide film removing step, said rinse step, and said thin film forming step are performed sequentially.

4. The substrate treatment method according to claim 2 , wherein said oxide film removing step, said rinse step, and said thin film forming step are performed in a non-atmospheric environment.

5. The substrate treatment method according to claim 1 , wherein the supplying step comprises supplying a mixture of a hydrofluoric acid and a dopant solution to the surface of said substrate to form a dopant-containing thin film on said surface.

6. The substrate treatment method according to claim 1 , comprising:
an oxide film removing step of supplying a hydrofluoric acid to a surface of said substrate to remove an oxide film formed on the surface thereof, to form said substrate that is without an oxide film; and
a thin film forming step of supplying the dopant solution to said surface to form said thin film,
wherein said thin film forming step is started during said oxide film removing step.

7. The substrate treatment method according to claim 1 , including
forming the thin film on the surface of the substrate with a dopant solution as a monolayer.

Assignees

• Screen Holdings Co Ltd

Inventors

• Kiyama Hiroki

Classifications

• H10P72/0426

  with the semiconductor substrates being dipped in baths or vessels · CPC title

• H10P72/0422

  for wet etching · CPC title

• H10P72/0414

  using mainly spraying means, e.g. nozzles · CPC title

• H10P72/0411

  for wet cleaning or washing · CPC title

• H10P72/0406

  for cleaning followed by drying, rinsing, stripping, blasting or the like · CPC title