Semiconductor Devices Comprising 2D-Materials and Methods of Manufacture Thereof
US-2016379901-A1 · Dec 29, 2016 · US
Electricity
Electricity · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01L21/02598 |
| Official title | — |
| Display label | Electricity (mapped technology topic) |
| Total patents | 449 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 27 |
| 2016 | 47 |
| 2017 | 56 |
| 2018 | 48 |
| 2019 | 42 |
| 2020 | 49 |
| 2021 | 52 |
| 2022 | 34 |
| 2023 | 28 |
| 2024 | 41 |
| 2025 | 23 |
| 2026 | 2 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Epitaxial structure and method for making the same
US-2016380147-A1 · Dec 29, 2016 · US
Method of modifying epitaxial growth shape on source drain area of transistor
US-9530661-B2 · Dec 27, 2016 · US
Method for producing SiC single crystal
US-9530642-B2 · Dec 27, 2016 · US
Method of making a three-dimensional memory device having a heterostructure quantum well channel
US-2016358933-A1 · Dec 8, 2016 · US
Plasma pre-clean module and process
US-9514927-B2 · Dec 6, 2016 · US
Vertical-type semiconductor devices and methods of manufacturing the same
US-9496277-B2 · Nov 15, 2016 · US
Integrated tensile strained silicon nfet and compressive strained silicon-germanium pfet implemented in finfet technology
US-2016329253-A1 · Nov 10, 2016 · US
Fin field effect transistor including a strained epitaxial semiconductor shell
US-2016322264-A1 · Nov 3, 2016 · US
Silicon single crystal wafer, manufacturing method thereof and method of detecting defects
US-2016315020-A1 · Oct 27, 2016 · US
Cleaning high aspect ratio vias
US-2016314961-A1 · Oct 27, 2016 · US
Substrate processing apparatus, apparatus for manufacturing semiconductor device, and gas supply system
US-2016305023-A1 · Oct 20, 2016 · US
Semiconductor Device with Rear-Side Insert Structure
US-2016300937-A1 · Oct 13, 2016 · US
Semiconductor device including multiple fin heights
US-9466702-B1 · Oct 11, 2016 · US
METHOD FOR GROWING BETA-Ga2O3-BASED SINGLE CRYSTAL FILM, AND CRYSTALLINE LAYERED STRUCTURE
US-2016265137-A1 · Sep 15, 2016 · US
Vertical fin eDRAM
US-9443857-B2 · Sep 13, 2016 · US
Fabricating 3D NAND memory having monolithic crystalline silicon vertical NAND channel
US-9443865-B2 · Sep 13, 2016 · US
III-nitride based semiconductor structure
US-9437687-B2 · Sep 6, 2016 · US
N-type aluminum nitride single-crystal substrate and vertical nitride semiconductor device
US-2016254391-A1 · Sep 1, 2016 · US
Sic single crystal and method for producing same
US-2016237590-A1 · Aug 18, 2016 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01L21/02598?
- CPC H01L21/02598 is the Cooperative Patent Classification code for “Electricity.”
- How many patents are filed under CPC H01L21/02598 (Electricity)?
- Our database includes 449 publications tagged with this CPC code.
- Is patent activity under CPC H01L21/02598 growing?
- Publication counts under this code: 41 in 2024 vs 23 in 2025 (latest complete years).