Metal resistors having nitridized dielectric surface layers and nitridized metal surface layers
US-2017301746-A1 · Oct 19, 2017 · US
Electricity
Electricity · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01L21/02332 |
| Official title | — |
| Display label | Electricity (mapped technology topic) |
| Total patents | 220 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 13 |
| 2016 | 37 |
| 2017 | 29 |
| 2018 | 29 |
| 2019 | 24 |
| 2020 | 25 |
| 2021 | 15 |
| 2022 | 9 |
| 2023 | 13 |
| 2024 | 16 |
| 2025 | 8 |
| 2026 | 2 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Integrated circuit devices and methods of manufacturing the same
US-9779996-B2 · Oct 3, 2017 · US
Simultaneous formation of liner and metal conductor
US-9721788-B1 · Aug 1, 2017 · US
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
US-9698007-B2 · Jul 4, 2017 · US
Conformal nitridation of one or more fin-type transistor layers
US-9698269-B2 · Jul 4, 2017 · US
Method of forming a semiconductor device
US-2017186607-A1 · Jun 29, 2017 · US
System and method for mitigating oxide growth in a gate dielectric
US-2017170022-A1 · Jun 15, 2017 · US
Asymmetric high-K dielectric for reducing gate induced drain leakage
US-9570354-B2 · Feb 14, 2017 · US
Method of forming shallow trench isolations for a semiconductor device
US-9559017-B2 · Jan 31, 2017 · US
Asymmetric high-k dielectric for reducing gate induced drain leakage
US-9559010-B2 · Jan 31, 2017 · US
Nanowire semiconductor device including lateral-etch barrier region
US-2016380083-A1 · Dec 29, 2016 · US
Three dimensional memory device with blocking dielectric having enhanced protection against fluorine attack
US-9515079-B2 · Dec 6, 2016 · US
Semiconductor device, finfet transistor and fabrication method thereof
US-2016351591-A1 · Dec 1, 2016 · US
Semiconductor device and method for forming the same
US-9502526-B2 · Nov 22, 2016 · US
Substrate processing apparatus for forming film including at least two different elements
US-2016329208-A1 · Nov 10, 2016 · US
Method of manufacturing semiconductor device for forming film including at least two different elements
US-9478417-B2 · Oct 25, 2016 · US
Nitridation on HDP oxide before high-k deposition to prevent oxygen ingress
US-9472408-B2 · Oct 18, 2016 · US
System and method for mitigating oxide growth in a gate dielectric
US-2016300722-A1 · Oct 13, 2016 · US
Hybrid high-k first and high-k last replacement gate process
US-2016300836-A1 · Oct 13, 2016 · US
Semiconductor device manufacturing method and substrate treatment system
US-9418837-B2 · Aug 16, 2016 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01L21/02332?
- CPC H01L21/02332 is the Cooperative Patent Classification code for “Electricity.”
- How many patents are filed under CPC H01L21/02332 (Electricity)?
- Our database includes 220 publications tagged with this CPC code.
- Is patent activity under CPC H01L21/02332 growing?
- Publication counts under this code: 16 in 2024 vs 8 in 2025 (latest complete years).