Selective deposition of metal oxide
US-2024282572-A1 · Aug 22, 2024 · US
Electricity
Electricity · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01L21/02205 |
| Official title | — |
| Display label | Electricity (mapped technology topic) |
| Total patents | 720 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 40 |
| 2016 | 51 |
| 2017 | 44 |
| 2018 | 55 |
| 2019 | 76 |
| 2020 | 105 |
| 2021 | 67 |
| 2022 | 73 |
| 2023 | 69 |
| 2024 | 65 |
| 2025 | 58 |
| 2026 | 17 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Area selective carbon-based film deposition
US-2024234127-A1 · Jul 11, 2024 · US
Scandium precursor for sc2o3 or sc2s3 atomic layer deposition
US-2024092804-A1 · Mar 21, 2024 · US
Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US-2024030035-A1 · Jan 25, 2024 · US
Differential etch of metal oxide blocking dielectric layer for three-dimensional memory devices
US-2016379989-A1 · Dec 29, 2016 · US
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
US-9520282-B2 · Dec 13, 2016 · US
Process for forming gate insulators for tft structures
US-2016315163-A1 · Oct 27, 2016 · US
Preparation of lanthanide-containing precursors and deposition of lanthanide-containing films
US-2016293409-A1 · Oct 6, 2016 · US
Nitride semiconductor device having aluminum oxide film and a process for producing the same
US-2016260828-A1 · Sep 8, 2016 · US
Low-temperature fabrication of nanomaterial-derived metal composite thin films
US-9412852-B2 · Aug 9, 2016 · US
Memory device structure and method
US-9406519-B2 · Aug 2, 2016 · US
Preparation of cerium-containing precursor and deposition of cerium-containing films
US-9384963-B2 · Jul 5, 2016 · US
Batch-type remote plasma processing apparatus
US-9373499-B2 · Jun 21, 2016 · US
Method for producing metal oxide film and method for producing transistor
US-2016163538-A1 · Jun 9, 2016 · US
Cyclic aluminum oxynitride deposition
US-2016148805-A1 · May 26, 2016 · US
Materials and methods of forming controlled void
US-9293361-B2 · Mar 22, 2016 · US
Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer-readable recording medium
US-2016079056-A1 · Mar 17, 2016 · US
Radical-enhanced atomic layer deposition using CF4 to enhance oxygen radical generation
US-2016064208-A1 · Mar 3, 2016 · US
Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer-readable recording medium
US-2016042940-A1 · Feb 11, 2016 · US
Low Temperature Molecular Layer Deposition Of SiCON
US-2016024647-A1 · Jan 28, 2016 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01L21/02205?
- CPC H01L21/02205 is the Cooperative Patent Classification code for “Electricity.”
- How many patents are filed under CPC H01L21/02205 (Electricity)?
- Our database includes 720 publications tagged with this CPC code.
- Is patent activity under CPC H01L21/02205 growing?
- Publication counts under this code: 65 in 2024 vs 58 in 2025 (latest complete years).