Preparation of cerium-containing precursor and deposition of cerium-containing films

Patent metadata

Field	Value
Publication number	US-9384963-B2
Application number	US-201414332720-A
Country	US
Kind code	B2
Filing date	Jul 16, 2014
Priority date	Jun 5, 2008
Publication date	Jul 5, 2016
Grant date	Jul 5, 2016

Abstract

Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. The disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and an amidine ligand.

First claim

What is claimed is:

1. A method of forming a lanthanide-containing film on a substrate, the method comprising the steps of: providing a reactor having at least one substrate disposed therein; introducing at least one lanthanide-containing precursor, the lanthanide containing precursor having the formula:
Ln(R 1 Cp) m (R 2 —N—C(R 4 )═N—R 2 ) n

wherein Ln is Ce or Pr; R 1 and R 2 is independently selected from the group consisting of H and a C1-C5 alkyl chain; R 4 is selected from the group consisting of H and Me; and n and m range from 1 to 2; and contacting the lanthanide-containing precursor and the substrate to form a lanthanide-containing film on at least one surface of the substrate using a deposition process.

2. The method of claim 1 , wherein the lanthanide-containing film is selected from the group consisting of Ln 2 O 3 , (LnLn′)O 3 , Ln 2 O 3 -Ln′ 2 O 3 , LnSi x O y , LnGe x O y , (Al, Ga, Mn)LnO 3 , HfLnO x , and ZrLnO x , wherein Ln and Ln′ are different.

3. The method of claim 1 , wherein the deposition process is a chemical vapor deposition process.

4. The method of claim 1 , wherein the deposition process is an atomic layer deposition process.

5. The method of claim 1 , further comprising the steps of:
a) providing at least one reactant species into the reactor, wherein said reactant species is an oxygen containing fluid; and
b) reacting said lanthanide-containing precursor with said reactant species.

6. The method of claim 1 , further comprising introducing a metal precursor into the reactor, wherein the metal precursor is different than the lanthanide-containing precursor and depositing at least part of the metal precursor to form the lanthanide-containing layer on the one or more substrates.

7. The method of claim 6 , wherein a metal of the metal precursor is selected from the group consisting of Hf, Si, Al, Ga, Mn, Ti, Ta, Bi, Zr, Pb, Nb, Mg, Sr, Y, Ba, Ca, a lanthanide, and combinations thereof.

8. The method of claim 1 , wherein R 2 of the lanthanide-containing precursor is iPr.

9. The method of claim 8 , wherein R 4 of the lanthanide-containing precursor is Me.

10. The method of claim 1 , wherein m of the lanthanide-containing precursor is 2 and n is 1.

11. The method of claim 10 , wherein R 1 of the lanthanide-containing precursor is selected from the group consisting of Me, Et, and iPr.

12. The method of claim 10 , wherein R 1 is iPr.

13. The method of claim 11 , wherein R 2 is selected from the group consisting of iPr and tBu.

14. The method of claim 11 , wherein R 2 is iPr.

15. The method of claim 12 , wherein R 2 is iPr.

16. The method of claim 10 , wherein R 4 is Me.

17. The method of claim 11 , wherein R 4 is Me.

18. The method of claim 13 , wherein R 4 is Me.

19. The method of claim 1 , wherein Ln is Ce, R 1 is iPr, R 2 is iPr and R 4 is Me.

20. The method of claim 1 , wherein Ln is Pr, R 1 is iPr, R 2 is iPr and R 4 is Me.

Assignees

• Air Liquide American

Inventors

• Pallem Venkateswara R
• Dussarrat Christian
• Noh Wontae

Classifications

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6334

  using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329) · CPC title

• H10P14/668

  the materials being characterised by the deposition precursor materials · CPC title

• H10P14/69396 Primary

  the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium · CPC title

• H10D64/691

  comprising metallic compounds, e.g. metal oxides or metal silicates  (insulators comprising nitrogen H10D64/693) · CPC title