Magnetoresistive element
US-10090459-B2 · Oct 2, 2018 · US
insulating or semiconductive spacer
insulating or semiconductive spacer · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01F41/307 |
| Official title | {insulating or semiconductive spacer} |
| Display label | insulating or semiconductive spacer |
| Total patents | 286 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 24 |
| 2016 | 15 |
| 2017 | 19 |
| 2018 | 9 |
| 2019 | 41 |
| 2020 | 44 |
| 2021 | 33 |
| 2022 | 29 |
| 2023 | 31 |
| 2024 | 24 |
| 2025 | 15 |
| 2026 | 2 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Perpendicularly Magnetized Ferromagnetic Layers Having an Oxide Interface Allowing for Improved Control of Oxidation
US-2018005746-A1 · Jan 4, 2018 · US
Perpendicular magnetic tunnel junction devices with high thermal stability
US-2017373246-A1 · Dec 28, 2017 · US
Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications
US-9842988-B2 · Dec 12, 2017 · US
Spin transfer torque cell for magnetic random access memory
US-2017338407-A1 · Nov 23, 2017 · US
Magnetic random access memory with perpendicular enhancement layer
US-2017324027-A1 · Nov 9, 2017 · US
Spin transfer torque cell for magnetic random access memory
US-9793471-B2 · Oct 17, 2017 · US
Magnetic element and method of fabrication thereof
US-2017279040-A1 · Sep 28, 2017 · US
Side shielded magnetoresistive (MR) read head with perpendicular magnetic free layer
US-9761254-B2 · Sep 12, 2017 · US
Perpendicular magnetic memory element having magnesium oxide cap layer
US-9748471-B2 · Aug 29, 2017 · US
Magnetic random access memory having perpendicular enhancement layer
US-2017162781-A1 · Jun 8, 2017 · US
Seed layer for growth of <111> magnetic materials
US-9673385-B1 · Jun 6, 2017 · US
Methods of forming a layer and methods of manufacturing magnetic memory devices using the same
US-9660187-B1 · May 23, 2017 · US
Magnetic sensor seed layer with magnetic and nonmagnetic layers
US-9659585-B2 · May 23, 2017 · US
Magnetoresistive element
US-2017117459-A1 · Apr 27, 2017 · US
Seed Layer for Multilayer Magnetic Materials
US-2017117456-A1 · Apr 27, 2017 · US
Magnetic tunnel junction (MTJ) memory element having tri-layer perpendicular reference layer
US-9608038-B2 · Mar 28, 2017 · US
Magnetic read head with magnetoresistive (MR) enhancements toward low resistance X area (RA) product
US-9601137-B2 · Mar 21, 2017 · US
Magnetic tunnel junction (mtj) devices particularly suited for efficient spin-torque-transfer (stt) magnetic random access memory (mram) (stt mram)
US-2017077387-A1 · Mar 16, 2017 · US
Side Shielded Magnetoresistive (MR) Read Head with Perpendicular Magnetic Free Layer
US-2017077391-A1 · Mar 16, 2017 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01F41/307?
- CPC H01F41/307 is the Cooperative Patent Classification code for “insulating or semiconductive spacer.”
- How many patents are filed under CPC H01F41/307 (insulating or semiconductive spacer)?
- Our database includes 286 publications tagged with this CPC code.
- Is patent activity under CPC H01F41/307 growing?
- Publication counts under this code: 24 in 2024 vs 15 in 2025 (latest complete years).