Magnetoresistive element

Patent metadata

Field	Value
Publication number	US-10090459-B2
Application number	US-201715397594-A
Country	US
Kind code	B2
Filing date	Jan 3, 2017
Priority date	Mar 22, 2013
Publication date	Oct 2, 2018
Grant date	Oct 2, 2018

Abstract

A magnetoresistive element includes a storage layer as a ferromagnetic layer which has magnetic anisotropy perpendicular to film planes, and in which a magnetization direction is variable, a reference layer as a ferromagnetic layer which has magnetic anisotropy perpendicular to film planes, and in which a magnetization direction is invariable, a tunnel barrier layer as a nonmagnetic layer formed between the storage layer and the reference layer, and a first underlayer formed on a side of the storage layer, which is opposite to a side facing the tunnel barrier layer, and containing amorphous W.

First claim

What is claimed is:

1. A magnetic memory device comprising:
a first ferromagnetic layer having a variable magnetization direction;
a second ferromagnetic layer having a fixed magnetization direction;
a nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer;
a first underlayer comprising an amorphous W;
a second underlayer comprising a first ferromagnetic material, the first ferromagnetic material containing Co or Fe;
a first electrode provided below the second underlayer; and
a second electrode provided above the second ferromagnetic layer,
wherein a thickness of the first underlayer is 8 Å or more and 20 Å or less, and the first underlayer and the second underlayer comprise amorphous portions.

2. The magnetic memory device of claim 1 , wherein the first underlayer is in direct contact with the first ferromagnetic layer.

3. The magnetic memory device of claim 1 , wherein the first ferromagnetic layer comprises a second ferromagnetic material, the second ferromagnetic material containing Co or Fe.

4. The magnetic memory device of claim 3 , wherein the second underlayer further comprises a different material from the first ferromagnetic layer.

5. The magnetic memory device of claim 4 , wherein the different material contains B, Si, S, C, P, Al, Ge, or Ga.

6. The magnetic memory device of claim 1 , wherein the first ferromagnetic layer comprises a crystalline portion.

7. A magnetic memory device comprising:
a first ferromagnetic layer having a variable magnetization direction;
a second ferromagnetic layer having a fixed magnetization direction;
a nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer;
a first underlayer comprising an amorphous W;
a second underlayer comprising a first ferromagnetic material, the first ferromagnetic material containing Co or Fe;
a first electrode provided below the second underlayer;
a second electrode provided above the second ferromagnetic layer; and
a mask containing a conductive metal material,
wherein a thickness of the first underlayer is 8 Å or more and 20 Å or less.

8. A magnetic memory device comprising:
a first ferromagnetic layer having a variable magnetization direction;
a second ferromagnetic layer having a fixed magnetization direction;
a nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer;
a first underlayer comprising an amorphous W;
a second underlayer comprising a first ferromagnetic material, the first ferromagnetic material containing Co or Fe;
a first electrode provided below the second underlayer;
a second electrode provided above the second ferromagnetic layer; and
a shift cancelling layer provided on the second ferromagnetic layer,
wherein a thickness of the first underlayer is 8 Å or more and 20 Å or less.

9. The magnetic memory device of claim 8 , further comprising an interlayer provided between the second ferromagnetic layer and the shift cancelling layer.

10. The magnetic memory device of claim 9 , wherein the interlayer contains Ru.

11. A magnetic memory device comprising:
a first ferromagnetic layer having a variable magnetization direction and comprising a crystal portion;
a second ferromagnetic layer having a fixed magnetization direction;
a nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer;
a first underlayer being in direct contact with the first ferromagnetic layer and containing amorphous W;
a second underlayer being in direct contact with the first underlayer and comprising an amorphous portion;
a first electrode provided below the second underlayer;
a second electrode provided above the second ferromagnetic layer; and
a mask containing a conductive metal material, wherein the mask is provided between the second ferromagnetic layer and the second electrode.

12. The magnetic memory device of claim 11 , wherein the first ferromagnetic layer is lattice matched with the nonmagnetic layer at an interface between the first ferromagnetic layer and the nonmagnetic layer.

13. The magnetic memory device of claim 12 , wherein the first underlayer is not lattice matched with the first ferromagnetic layer at an interface between the first underlayer and the first ferromagnetic layer.

14. The magnetic memory device of claim 11 , wherein the first ferromagnetic layer comprises a crystalline portion.

15. The magnetic memory device of claim 11 , further comprising a shift cancelling layer provided on the second ferromagnetic layer.

16. The magnetic memory device of claim 15 , further comprising an interlayer provided between the second ferromagnetic layer and the shift cancelling layer.

17. The magnetic memory device of claim 16 , wherein the interlayer contains Ru.

18. The magnetic memory device of claim 7 , wherein the mask is provided between the second ferromagnetic layer and the second electrode.

19. A magnetic memory device comprising:
a first ferromagnetic layer having a variable magnetization direction and comprising a crystal portion;
a second ferromagnetic layer having a fixed magnetization direction;
a nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer;
a first underlayer being in direct contact with the first ferromagnetic layer and containing amorphous W;
a second underlayer being in direct contact with the first underlayer and comprising an amorphous portion;
a first electrode provided below the second underlayer;
a second electrode provided above the second ferromagnetic layer; and
a shift cancelling layer provided on the second ferromagnetic layer.

20. The magnetic memory device of claim 19 , further comprising an interlayer provided between the second ferromagnetic layer and the shift cancelling layer.

Assignees

• Toshiba Memory Corp

Inventors

• Watanabe Daisuke
• Eeh Youngmin
• Sawada Kazuya
• Ueda Koji
• Nagase Toshihiko

Classifications

• H01L27/228

  Electricity · mapped topic

• H01L43/12

  Electricity · mapped topic

• H01L43/08

  Electricity · mapped topic

• H01L43/10 Primary

  Electricity · mapped topic

• H01F10/3286

  Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy · CPC title