Magnetic sensor seed layer with magnetic and nonmagnetic layers

Patent metadata

Field	Value
Publication number	US-9659585-B2
Application number	US-201113993166-A
Country	US
Kind code	B2
Filing date	Dec 15, 2011
Priority date	Dec 15, 2010
Publication date	May 23, 2017
Grant date	May 23, 2017

Abstract

A magnetic sensor has a bottom shield layer, an upper shield layer, and a sensor stack adjacent the upper shield layer. The sensor includes a seed layer between the bottom shield layer and an antiferromagnetic layer of the sensor stack. The seed layer has a magnetic layer adjacent the sensor stack and a nonmagnetic layer adjacent the bottom shield layer.

First claim

What is claimed is:

1. A magnetic sensor, comprising:
a bottom shield layer;
an upper shield layer;
a sensor stack adjacent the upper shield layer; and
a seed layer between the bottom shield layer and an antiferromagnetic layer of the sensor stack, wherein the seed layer comprises one or more dual layer structures, each dual layer structure including a magnetic layer comprising a NiW alloy disposed directly on a nonmagnetic layer, the nonmagnetic layer being less than half the thickness of the magnetic layer in the dual layer structure, and wherein a magnetic layer of one of the one or more dual layer structures is adjacent the sensor stack and a nonmagnetic layer of one of the one or more dual layer structures is adjacent the bottom shield layer.

2. The magnetic sensor of claim 1 , wherein the magnetic layer comprises a high magnetic moment soft ferromagnetic material.

3. The magnetic sensor of claim 1 , wherein the magnetic layer comprises an NiFeW, NiCoW, or NiCoFeW alloy layer.

4. The magnetic sensor of claim 1 , wherein the nonmagnetic layer comprises a Ta, Ru, TaCr, or NiW layer.

5. The magnetic sensor of claim 1 , further comprising a cap layer between the upper shield layer and the sensor stack, the cap layer comprising a magnetic cap layer adjacent the sensor stack and a nonmagnetic cap layer adjacent the upper shield layer.

6. A method, comprising:
forming a bottom shield layer on a substrate;
forming a first nonmagnetic layer of a seed layer on the bottom shield layer;
forming a first magnetic layer of the seed layer directly on the first nonmagnetic layer, wherein the magnetic layer is more than twice as thick as the nonmagnetic layer;
forming a second nonmagnetic layer of the seed layer on the first magnetic layer of the seed layer;
forming a second magnetic layer of the seed layer directly on the second nonmagnetic layer of the seed layer;
forming a sensor stack on the magnetic layer of the seed layer; and
forming an upper shield on the sensor stack.

7. The method of claim 6 , wherein the magnetic layer comprises a high magnetic moment soft ferromagnetic material.

8. The method of claim 6 , wherein the magnetic layer comprises at least one of an NiW, NiFe, NiFeW, NiCoW, NiCoFeW , CoNiFe, CoFeB, or NiFeB layer.

9. The method of claim 6 , wherein the nonmagnetic layer comprises a Ta, Ru, TaCr, or NiW layer.

10. The method of claim 6 , further comprising:
forming a magnetic cap layer on the sensor stack; and
forming a nonmagnetic cap layer on the magnetic cap layer, wherein the upper shield is formed on the nonmagnetic cap layer.

11. A magnetic sensor, comprising:
a magnetoresistive sensor stack disposed between bottom and upper shields; and
at least two adjacent dual layer structures, each dual layer structure including a magnetic layer adjacent a nonmagnetic layer, coupling the magnetoresistive sensor stack to at least one of the bottom and upper shields, one of the dual layer structures having a magnetic layer adjacent the sensor stack and another dual layer structure having a nonmagnetic layer adjacent the respective at least one of the bottom and upper shields, wherein the at least two dual layer structures provide an effective shield-to-shield spacing that is less than a distance between the bottom and upper shields.

12. The magnetic sensor of claim 11 , wherein the magnetic layer comprises a high magnetic moment soft ferromagnetic material.

13. The magnetic sensor of claim 11 , wherein the nonmagnetic layer is substantially thinner than the magnetic layer.

14. The magnetic sensor of claim 11 , wherein the magnetic layer comprises at least one of an NiW, NiFeW, NiCoW, NiCoFeW , CoNiFe, CoFeB, or NiFeB layer.

15. The magnetic sensor of claim 11 , wherein the nonmagnetic layer comprises at least one of a Ta, Ru, TaCr, or NiW layer.

Assignees

• Singleton Eric Walter
• Tsoukatos Antonia
• Tan Liwen
• Yi Jae-Young
• Seagate Technology Llc

Inventors

• Singleton Eric Walter
• Tsoukatos Antonia
• Tan Liwen
• Yi Jae-Young

Classifications

• H01F10/30

  characterised by the composition of the intermediate layers {, e.g. seed, buffer, template, diffusion preventing, cap layers (H01F10/06 and H01F10/32 take precedence)} · CPC title

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title

• H01F41/307

  insulating or semiconductive spacer · CPC title

• H01F10/3272

  by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets · CPC title

• G11B5/3912

  Arrangements in which the active read-out elements are transducing in association with active magnetic shields, e.g. magnetically coupled shields (G11B5/3916 takes precedence) · CPC title