Method for growing group III-nitride crystals in supercritical ammonia using an autoclave

Patent metadata

Field	Value
Publication number	US-9551088-B2
Application number	US-201414206558-A
Country	US
Kind code	B2
Filing date	Mar 12, 2014
Priority date	Jul 8, 2005
Publication date	Jan 24, 2017
Grant date	Jan 24, 2017

Abstract

A method of growing high-quality, group-III nitride, bulk single crystals. The group III-nitride bulk crystal is grown in an autoclave in supercritical ammonia using a source material or nutrient that is a group III-nitride polycrystals or group-III metal having a grain size of at least 10 microns or more and a seed crystal that is a group-III nitride single crystal. The group III-nitride polycrystals may be recycled from previous ammonothermal process after annealing in reducing gas at more then 600° C. The autoclave may include an internal chamber that is filled with ammonia, wherein the ammonia is released from the internal chamber into the autoclave when the ammonia attains a supercritical state after the heating of the autoclave, such that convection of the supercritical ammonia transfers source materials and deposits the transferred source materials onto seed crystals, but undissolved particles of the source materials are prevented from being transferred and deposited on the seed crystals.

First claim

What is claimed is:

1. An apparatus for growing group-III nitride crystals, comprising:
(a) an autoclave; and
(b) an internal chamber placed within the autoclave, wherein the internal chamber is filled with source materials, group-III nitride seed crystals and ammonia, the autoclave's temperature is raised, and the ammonia is released from the internal chamber into the autoclave when the ammonia attains a supercritical state, such that the released ammonia fills a space between the internal chamber's outer walls and the autoclave's inner walls to balance a pressure between inside and outside of the internal chamber, and convection of the ammonia in the supercritical state transfers the source materials and deposits the transferred source materials onto the group-III nitride seed crystals.

2. The apparatus of claim 1 , wherein the internal chamber is equipped with a valve that is mechanically opened when the internal chamber is inside the autoclave.

3. The apparatus of claim 1 , wherein the internal chamber is equipped with a pressure-releasing mechanism that is activated at a high pressure.

4. The apparatus of claim 1 , wherein the internal chamber is equipped with a pressure-releasing mechanism that is activated at a low temperature.

5. The apparatus of claim 1 , wherein the internal chamber is equipped with a pressure-releasing mechanism comprising a rupture disk that ruptures at a high pressure.

6. The apparatus of claim 1 , wherein the internal chamber is equipped with a pressure-releasing mechanism comprising a fitting seal that leaks at a high pressure.

7. The apparatus of claim 1 , wherein the internal chamber is equipped with a pressure-releasing mechanism comprising a metal seal that melts at a low temperature.

8. The apparatus of claim 1 , wherein the source materials are held in a mesh basket and the mesh basket is made of Ni or Ni-based alloy that contains at least 30% of Ni.

9. The apparatus of claim 1 , wherein the source materials have a grain size of at least 10 microns.

10. The apparatus of claim 1 , wherein the source materials are group-III nitride polycrystals.

11. The apparatus of claim 1 , wherein the source materials are a group-III metal.

12. The apparatus of claim 1 , wherein the source materials are a mixture of group-III metal and group-III nitride polycrystals.

13. The apparatus of claim 1 , wherein part or all of the source materials are prepared by a recycling process for a nutrient used in a previous ammonothermal process or fragments of the group III-nitride crystals grown in the previous ammonothermal process.

14. The apparatus of claim 13 , wherein the nutrients or the fragments are annealed in the recycling process at more than 600° C. in a reducing environment.

15. The apparatus of claim 14 , wherein the reducing environment contains hydrogen or ammonia.

16. The apparatus of claim 1 , wherein undissolved particles of the source materials are prevented from being transferred and deposited on the group-III nitride seed crystals during the convection of the supercritical ammonia.

Assignees

• Univ California
• Japan Science & Tech Agency

Inventors

• Fujito Kenji
• Hashimoto Tadao
• Nakamura Shuji

Classifications

• C30B7/10 Primary

  by application of pressure, e.g. hydrothermal processes · CPC title

• C30B29/403

  AIII-nitrides · CPC title

• C30B29/406

  Gallium nitride · CPC title

• Y10T117/1096

  including pressurized crystallization means [e.g., hydrothermal] · CPC title

• C30B7/105 Primary

  using ammonia as solvent, i.e. ammonothermal processes · CPC title