Method for manufacturing semiconductor device
US-2023290635-A1 · Sep 14, 2023 · US
by chemical reaction of reactive gases
by chemical reaction of reactive gases · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B28/14 |
| Official title | by chemical reaction of reactive gases |
| Display label | by chemical reaction of reactive gases |
| Total patents | 100 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly growing.
| Year | Patents |
|---|---|
| 2015 | 6 |
| 2016 | 4 |
| 2017 | 5 |
| 2018 | 6 |
| 2019 | 9 |
| 2020 | 10 |
| 2021 | 7 |
| 2022 | 10 |
| 2023 | 7 |
| 2024 | 12 |
| 2025 | 21 |
| 2026 | 3 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Quality evaluation method, manufacturing system of silicon for evaluation, manufacturing method of silicon for evaluation, and silicon for evaluation
US-2023236165-A1 · Jul 27, 2023 · US
METHOD OF MANUFACTURING HIGH-PURITY SiC CRYSTAL
US-2023141427-A1 · May 11, 2023 · US
Metal-graphene composite
US-2022364264-A1 · Nov 17, 2022 · US
Crystalline oxide semiconductor film and semiconductor device
US-2022302263-A1 · Sep 22, 2022 · US
Silicon Core Wire for Depositing Polycrystalline Silicon and Production Method Therefor
US-2022281751-A1 · Sep 8, 2022 · US
Quantitative textured polycrystalline coatings
US-2022235487-A1 · Jul 28, 2022 · US
Crystalline oxide semiconductor film and semiconductor device
US-11393906-B2 · Jul 19, 2022 · US
Polycrystalline silicon bar, polycrystalline silicon rod, and manufacturing method thereof
US-11345603-B2 · May 31, 2022 · US
Structures and method for growing diamond layers
US-11348858-B2 · May 31, 2022 · US
Method of manufacturing group-iii nitride crystal
US-2022056614-A1 · Feb 24, 2022 · US
Polycrystalline silicon rod and method for producing polycrystalline silicon rod
US-11242620-B2 · Feb 8, 2022 · US
Polycrystalline silicon rod
US-2022033267-A1 · Feb 3, 2022 · US
Component and semiconductor manufacturing device
US-2021381094-A1 · Dec 9, 2021 · US
Method for manufacturing a group III-nitride crystal comprising supplying a group III-element oxide gas and a nitrogen element-containing gas at a supersaturation ratio of greater than 1 and equal to or less than 5
US-11155931-B2 · Oct 26, 2021 · US
Method of forming titanium nitride films with (200) crystallographic texture
US-11152207-B2 · Oct 19, 2021 · US
Component and semiconductor manufacturing device
US-11111573-B2 · Sep 7, 2021 · US
Electrode for depositing polycrystalline silicon
US-2021164124-A1 · Jun 3, 2021 · US
Method for producing chlorosilanes
US-2021163302-A1 · Jun 3, 2021 · US
Silicon carbide epitaxial growth device and method of manufacturing silicon carbide epitaxial wafer
US-2021010158-A1 · Jan 14, 2021 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C30B28/14?
- CPC C30B28/14 is the Cooperative Patent Classification code for “by chemical reaction of reactive gases.”
- How many patents are filed under CPC C30B28/14 (by chemical reaction of reactive gases)?
- Our database includes 100 publications tagged with this CPC code.
- Is patent activity under CPC C30B28/14 growing?
- Publication counts under this code: 12 in 2024 vs 21 in 2025 (latest complete years).