Polycrystalline silicon rod
US-2018244527-A1 · Aug 30, 2018 · US
Polycrystalline silicon rod and method for producing polycrystalline silicon rod
US11242620B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11242620-B2 |
| Application number | US-201816026818-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 3, 2018 |
| Priority date | Jul 12, 2017 |
| Publication date | Feb 8, 2022 |
| Grant date | Feb 8, 2022 |
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- Title
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Abstract
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To provide polycrystalline silicon suitable as a raw material for production of single-crystalline silicon. A D/L value is set within the range of less than 0.40 when multiple pairs of silicon cores are placed in a reaction furnace in production of a polycrystalline silicon rod having a diameter of 150 mm or more by deposition according to a chemical vapor deposition process and it is assumed that the average value of the final diameter of the polycrystalline silicon rod is defined as D (mm) and the mutual interval between the multiple pairs of silicon cores is defined as L (mm).
First claim
Opening claim text (preview).
What is claimed is: 1. A method for producing a polycrystalline silicon rod having a diameter of 150 mm or more by a deposition according to a chemical vapor deposition process, wherein a D/L value is set within a range of less than 0.40 when at least two pairs of silicon cores are placed in a reaction furnace and wherein an average value of a final diameter of the polycrystalline silicon rod is defined as D (mm) and a mutual interval between the at least two pairs of silicon cores is defined as L (mm). 2. The method for producing a polycrystalline silicon rod according to claim 1 , wherein a reaction pressure in the deposition according to the chemical vapor deposition process of the polycrystalline silicon is set to 0.2 MPa or more.
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Classifications
Methods for making free-standing articles (C23C16/01 takes precedence) · CPC title
Single-crystal growth by zone-melting; Refining by zone-melting (C30B17/00 takes precedence; by changing the cross-section of the treated solid C30B15/00; under a protective fluid C30B27/00; for the growth of homogeneous polycrystalline material with defined structure C30B28/00) · CPC title
- C30B35/007Primary
Apparatus for preparing, pre-treating the source material to be used for crystal growth · CPC title
- C30B29/06Primary
Silicon · CPC title
Deposition of silicon only · CPC title
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- What does patent US11242620B2 cover?
- To provide polycrystalline silicon suitable as a raw material for production of single-crystalline silicon. A D/L value is set within the range of less than 0.40 when multiple pairs of silicon cores are placed in a reaction furnace in production of a polycrystalline silicon rod having a diameter of 150 mm or more by deposition according to a chemical vapor deposition process and it is assumed t…
- Who is the assignee on this patent?
- Shinetsu Chemical Co
- What technology area does this patent fall under?
- Primary CPC classification C30B35/007. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Feb 08 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 6 related publications on this page (citations in our corpus or others sharing the same primary CPC).