Component and semiconductor manufacturing device

Patent metadata

Field	Value
Publication number	US-11111573-B2
Application number	US-202016777371-A
Country	US
Kind code	B2
Filing date	Jan 30, 2020
Priority date	Jul 31, 2017
Publication date	Sep 7, 2021
Grant date	Sep 7, 2021

Abstract

A component includes a film containing polycrystalline yttrium oxide. In an X-ray diffraction pattern of the film, a ratio Im/Ic of a maximum intensity Im of a peak attributed to monoclinic yttrium oxide to a maximum intensity Ic of a peak attributed to cubic yttrium oxide satisfies an expression: 0≤Im/Ic≤0.002.

First claim

What is claimed is:

1. A component, comprising
a film containing crystalline yttrium oxide,
wherein
in an X-ray diffraction pattern of the film, a ratio I m /I c of a maximum intensity I m of a peak attributed to monoclinic yttrium oxide to a maximum intensity I c of a peak attributed to cubic yttrium oxide satisfies an expression: 0≤I m /I c ≤0.002,
an average grain diameter of the crystalline yttrium oxide is 3.8 nm or less, and
in an observation image obtained by observing a cross section in a thickness direction of the film by using a scanning electron microscope at 10000 magnification, a pore is not present or a maximum diameter of a pore is 10 nm or less.

2. The component according to claim 1 , wherein the X-ray diffraction pattern does not have a peak attributed to yttrium oxide whose crystal structure is different from a crystal structure of the cubic yttrium oxide.

3. The component according to claim 1 , wherein a thickness of the film is 100 μm or less.

4. The component according to claim 1 , wherein a thickness of the film is 10 μm or more and 50 μm or less.

5. The component according to claim 1 , wherein: a content of yttrium oxide in the film is 99 mass % or more; a content of aluminum in the film is 100 mass ppm or less; a content of magnesium in the film is 20 mass ppm or less; a content of sodium in the film is 50 mass ppm or less; a content of zinc in the film is 100 mass ppm or less; a content of calcium in the film is 100 mass ppm or less; a content of potassium in the film is 5 mass ppm or less; and a content of nickel in the film is 10 mass ppm or less.

6. The component according to claim 1 , wherein a tensile strength B of the film obtained after performing three cycles of exposing the component to a temperature environment between 400° C. and 600° C. for 30 minutes and then exposing the component to a temperature environment of 25° C. for 30 minutes, with respect to a tensile strength A of the film under a temperature environment of 25° C., satisfies an expression: ((A−B)/A)×100%≤20%.

7. A semiconductor manufacturing apparatus, comprising the component according to claim 1 .

8. The semiconductor manufacturing apparatus according to claim 7 , further comprising a mechanism for performing plasma processing, wherein the mechanism has the component.

9. The component according to claim 1 , wherein
the X-ray diffraction pattern does not have a peak attributed to yttrium oxide whose crystal structure is different from a crystal structure of the cubic yttrium oxide, and
a thickness of the film is 100 μm or less.

10. The component according to claim 1 , wherein
the X-ray diffraction pattern does not have a peak attributed to yttrium oxide whose crystal structure is different from a crystal structure of the cubic yttrium oxide,
a thickness of the film is 100 μm or less,
a content of yttrium oxide in the film is 99 mass % or more,
a content of aluminum in the film is 100 mass ppm or less,
a content of magnesium in the film is 20 mass ppm or less,
a content of sodium in the film is 50 mass ppm or less,
a content of zinc in the film is 100 mass ppm or less, a content of calcium in the film is 100 mass ppm or less,
a content of potassium in the film is 5 mass ppm or less, and
a content of nickel in the film is 10 mass ppm or less.

11. A semiconductor manufacturing apparatus, comprising the component according to claim 9 .

12. A semiconductor manufacturing apparatus, comprising the component according to claim 10 .

Assignees

• Kyocera Corp

Inventors

• Hino Takashi
• Inoue Tetsuo
• Saito Shuichi

Classifications

• H10P50/242

  of Group IV materials · CPC title

• C23C14/5853

  Oxidation · CPC title

• C23C14/5806

  Thermal treatment · CPC title

• C23C14/542

  Controlling the film thickness or evaporation rate · CPC title

• C23C14/34

  Sputtering · CPC title