Polycrystalline silicon rod, processing method for polycrystalline silicon rod, method for evaluating polycrystalline silicon rod, and method for producing FZ single crystal silicon
US-11167994-B2 · Nov 9, 2021 · US
Polycrystalline silicon bar, polycrystalline silicon rod, and manufacturing method thereof
US11345603B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11345603-B2 |
| Application number | US-201916716825-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 17, 2019 |
| Priority date | Jan 18, 2019 |
| Publication date | May 31, 2022 |
| Grant date | May 31, 2022 |
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Abstract
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In a step of performing cylindrical grinding of a polycrystalline silicon bar 10 grown by a Siemens method, this cylindrical grinding step is performed such that a polycrystalline silicon rod 30, whose center axis CR is shifted from a center axis C0 of a silicon core wire 20 by 2 mm or more, is manufactured.
First claim
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The invention claimed is: 1. A polycrystalline silicon bar grown by the Siemens method and subjected to cylindrical grinding wherein a center axis of a silicon core wire is located 2 mm or more from the center axis of the a polycrystalline silicon bar. 2. The polycrystalline silicon bar according to claim 1 , wherein a distance between the center axes is 5 mm or more. 3. The polycrystalline silicon bar according to claim 1 , wherein a distance between the center axes is 10 mm or more. 4. The polycrystalline silicon bar according to claim 1 , wherein a distance between the center axes is 20 mm or more. 5. A polycrystalline silicon rod grown by the Siemens method and subjected to cylindrical grinding wherein a center axis of a silicon core wire is located 2 mm or more from the center axis of the a polycrystalline silicon rod. 6. The polycrystalline silicon rod according to claim 5 , wherein a distance between the center axes is 5 mm or more. 7. The polycrystalline silicon rod according to claim 5 , wherein a distance between the center axes is 10 mm or more. 8. The polycrystalline silicon rod according to claim 5 , wherein a distance between the center axes is 20 mm or more. 9. A manufacturing method of a polycrystalline silicon rod comprising a step of performing cylindrical grinding of a polycrystalline silicon bar grown by a Siemens method, wherein the cylindrical grinding step is performed such that a center axis of a silicon core wire is located 2 mm or more from the center axis of the a polycrystalline silicon bar. 10. The manufacturing method of a polycrystalline silicon rod according to claim 9 , wherein the cylindrical grinding step is performed such that a center axis of a silicon core wire is located 5 mm or more from the center axis of the a polycrystalline silicon bar. 11. The manufacturing method of a polycrystalline silicon rod according to claim 9 , wherein the cylindrical grinding step is performed such that a center axis of a silicon core wire is located 10 mm or more from the center axis of the a polycrystalline silicon bar. 12. The manufacturing method of a polycrystalline silicon rod according to claim 9 , wherein the cylindrical grinding step is performed such that a center axis of a silicon core wire is located 20 mm or more from the center axis of the a polycrystalline silicon bar.
Assignees
Inventors
Classifications
- C30B29/06Primary
Silicon · CPC title
for grinding cylindrical surfaces externally (grinding combined cylindrical and conical surfaces B24B5/14) · CPC title
- C01B33/035Primary
by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process · CPC title
Apparatus for preparing, pre-treating the source material to be used for crystal growth · CPC title
Single-crystal growth by zone-melting; Refining by zone-melting (C30B17/00 takes precedence; by changing the cross-section of the treated solid C30B15/00; under a protective fluid C30B27/00; for the growth of homogeneous polycrystalline material with defined structure C30B28/00) · CPC title
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- What does patent US11345603B2 cover?
- In a step of performing cylindrical grinding of a polycrystalline silicon bar 10 grown by a Siemens method, this cylindrical grinding step is performed such that a polycrystalline silicon rod 30, whose center axis CR is shifted from a center axis C0 of a silicon core wire 20 by 2 mm or more, is manufactured.
- Who is the assignee on this patent?
- Shinetsu Chemical Co
- What technology area does this patent fall under?
- Primary CPC classification C30B29/06. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue May 31 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).