Gallium nitride substrate
US-2017101724-A1 · Apr 13, 2017 · US
Gallium arsenide single crystal substrate
US11319646B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11319646-B2 |
| Application number | US-201917288153-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 10, 2019 |
| Priority date | Jul 10, 2019 |
| Publication date | May 3, 2022 |
| Grant date | May 3, 2022 |
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Abstract
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The gallium arsenide single crystal substrate has a circular main surface, and when the diameter of the main surface of the gallium arsenide single crystal substrate is represented by D and the number of etch pits formed on the main surface by immersing the gallium arsenide single crystal substrate in molten potassium hydroxide at 500° C. for 10 minutes is counted, the number C1 of etch pits in a first circular region having a diameter of 0.2D around the center of the main surface is 0 or more and 10 or less.
First claim
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The invention claimed is: 1. A gallium arsenide single crystal substrate having a circular main surface, when the diameter of the main surface of the gallium arsenide single crystal substrate is represented by D and the number of etch pits formed on the main surface by immersing the gallium arsenide single crystal substrate in molten potassium hydroxide at 500° C. for 10 minutes is counted, the number C 1 of etch pits in a first circular region having a diameter of 0.2D around the center of the main surface being 0 or more and 10 or less, wherein the diameter D of the gallium arsenide single crystal substrate is not less than 75 mm and not more than 205 mm. 2. The gallium arsenide single crystal substrate according to claim 1 , wherein the number C 1 of etch pits in the first circular region of the gallium arsenide single crystal substrate is 0 or more and 5 or less. 3. The gallium arsenide single crystal substrate according to claim 1 , wherein a difference C 2 -C 1 between the number C 2 of etch pits in a second circular region having a diameter of 0.5D around the center of the main surface of the gallium arsenide single crystal substrate and the number C 1 of etch pits in the first circular region thereof is 0 or more and 5 or less. 4. The gallium arsenide single crystal substrate according to claim 1 , wherein an etch pit density representing the number of etch pits in 1 cm 2 of the main surface of the gallium arsenide single crystal substrate is 0 or more and 1000 or less. 5. The gallium arsenide single crystal substrate according to claim 1 , wherein the main surface of the gallium arsenide single crystal substrate is a {100} plane. 6. The gallium arsenide single crystal substrate according to claim 1 , wherein the main surface of the gallium arsenide single crystal substrate has an off angle of greater than 0° and equal to or less than 15° from the {100} plane. 7. The gallium arsenide single crystal substrate according to claim 1 , wherein the gallium arsenide single crystal substrate has an n-type conductivity. 8. The gallium arsenide single crystal substrate according to claim 1 , wherein the gallium arsenide single crystal substrate contains silicon, and the atomic concentration of the silicon is 1×10 16 cm −3 or more and 1×10 19 cm −3 or less. 9. A gallium arsenide single crystal substrate having a circular main surface, when the diameter of the main surface of the gallium arsenide single crystal substrate is represented by D and the number of etch pits formed on the main surface by immersing the gallium arsenide single crystal substrate in molten potassium hydroxide at 500° C. for 10 minutes is counted, the number C 1 of etch pits in a first circular region having a diameter of 0.2D around the center of the main surface being 0 or more and 10 or less, wherein the diameter D of the gallium arsenide single crystal substrate is not less than 100 mm and not more than 205 mm.
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- What does patent US11319646B2 cover?
- The gallium arsenide single crystal substrate has a circular main surface, and when the diameter of the main surface of the gallium arsenide single crystal substrate is represented by D and the number of etch pits formed on the main surface by immersing the gallium arsenide single crystal substrate in molten potassium hydroxide at 500° C. for 10 minutes is counted, the number C1 of etch pits in…
- Who is the assignee on this patent?
- Sumitomo Electric Industries
- What technology area does this patent fall under?
- Primary CPC classification C30B29/42. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue May 03 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).