Crystal growth apparatus, method for manufacturing silicon carbide single crystal, silicon carbide single crystal substrate, and silicon carbide epitaxial substrate

Patent metadata

Field	Value
Publication number	US-10494735-B2
Application number	US-201515529167-A
Country	US
Kind code	B2
Filing date	Dec 17, 2015
Priority date	Jan 21, 2015
Publication date	Dec 3, 2019
Grant date	Dec 3, 2019

Abstract

A crystal growth apparatus includes: a chamber including a gas inlet, a gas outlet, a welded portion, and a water-cooling portion configured to water-cool a portion at least including the welded portion; an exhaust pump connected to the gas outlet; a dew point instrument disposed between the gas outlet and the exhaust pump, the dew point instrument being configured to measure a dew point of gas passing through the gas outlet.

First claim

The invention claimed is:

1. A method for manufacturing a silicon carbide single crystal, the method comprising:
preparing a chamber, a growth container, a source material, and a seed crystal, the chamber including a gas inlet, a gas outlet, a welded portion, and a water-cooling portion configured to water-cool a portion at least including the welded portion, the growth container being disposed in the chamber, the source material being disposed in the growth container, the seed crystal being disposed to face the source material in the growth container;
growing a silicon carbide single crystal on the seed crystal by sublimating the source material; and
measuring a dew point of gas passing through the gas outlet,
in growing, the dew point of gas passing through the gas outlet being maintained at not more than −40° C.

2. The method for manufacturing the silicon carbide single crystal according to claim 1 , wherein in growing, a dew point of the gas passing through the gas outlet is maintained at not more than −50° C.

3. The method for manufacturing the silicon carbide single crystal according to claim 1 , wherein in growing, a dew point of the gas passing through the gas outlet is maintained at not more than −60° C.

4. The method for manufacturing the silicon carbide single crystal according to claim 1 , wherein in growing, a dew point of the gas passing through the gas outlet is maintained at not more than −80° C.

Assignees

• Sumitomo Electric Industries

Inventors

• Harada Shin
• Hori Tsutomu
• Sasaki Sho
• Kishida Tetsuya

Classifications

• H10P14/3442

  N-type · CPC title

• H10P14/3408

  Silicon carbide · CPC title

• H10P14/2904

  Silicon carbide · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• C23C16/452

  by activating reactive gas streams before {their} introduction into the reaction chamber, e.g. by {ionisation} or addition of reactive species · CPC title